Fairchild Semiconductor FMC7G50US60 Datasheet
October 2001
FMC7G50US60
FMC7G50US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters wher e short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
= 100°C, V
C
(sat) = 2.2 V @ IC = 50A
CE
GE
= 15V
IGBT
Package Code : 21PM-BA
PNP1
GU
R
S
T
B
EU
GB
E
-GU
GV
EV
U
-GV
GW
EW
V
-GW
W
Internal Circuit Diagram
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Description FMC7G50US60 Units
Inverter
&
Brake
Converter
Common
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
V
RRM
I
O
I
FSM
2
I
t
T
J
T
STG
V
ISO
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C50 A
Pulsed Collector Current 100 A
Diode Continuous Forward Current @ TC = 100°C50 A
Diode Maximum Forward Current 100 A
Maximum Power Dissipation @ TC = 25°C 200 W
Short Circuit Withstand Time @ TC = 100°C10 us
Repetitive Peak Reverse Voltage 1200 V
Average Output Rectified Current 50 A
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current 1025 A
500 A
2
s
Operating Junction Temperature -40 to +150 °C
Storage Temperature Range -40 to +125 °C
Isolation Voltage @ AC 1minute 2500 V
Mounting Torque Mounting part Screw @ M4 1.25 N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation FMC7G50US60 Rev. A3
FMC7G50US60
Electrical Characteristics of the IGBT
@ Inverter & Brake
T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 500mA, V
CE
Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V
= V
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 480 -- pF
Reverse Transfer Capacitance -- 140 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 3460 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 2.8 3.8 mJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 4.72 6.65 mJ
ts
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
-- 32 -- ns
Rise Time -- 67 -- ns
Turn-Off Delay Time -- 66 1 0 0 ns
Fall Time -- 118 200 ns
Turn-On Switching Loss -- 1.8 -- mJ
= 300 V, IC = 50A,
V
CC
= 5.9Ω, VGE = 15V
R
G
Inductive Load, T
= 25°C
C
Turn-Off Switching Loss -- 1.0 -- mJ
Turn-On Delay Time
-- 33 -- ns
Rise Time -- 68 -- ns
Turn-Off Delay Time -- 68 110 ns
Fall Time -- 261 400 ns
Turn-On Switching Loss -- 2.4 1 -- mJ
V
= 300 V, IC = 50A,
CC
R
= 5.9Ω, V
G
GE
Inductive Load, T
= 15V
= 125°C
C
Turn-Off Switching Loss -- 2.31 -- mJ
V
= 300 V, VGE = 15V
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 28 40 nC
Gate-Collector Charge -- 65 95 nC
CC
@
TC = 100°C
= 300 V, IC = 50A,
V
CE
V
= 15V
GE
10 -- -- us
-- 145 210 nC
©2001 Fairchild Semiconductor Corporation FMC7G50US60 Rev. A3
FMC7G50US60
Electrical Characteristics of the DIODE
@ Inverter & Brake
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage IF = 50A
Diode Reverse Recovery Time
I
Diode Peak Reverse Recovery
Current
= 50A
F
di / dt = 100 A/us
Diode Reverse Recovery Charge
Electrical Characteristics of the DIODE
= 25°C
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
T
= 25°C
C
= 100°C
T
C
T
= 25°C
C
= 100°C
T
C
@ Converter
TC = 25°C unless otherwise noted
-- 1.9 2.8
-- 1.8 --
-- 90 130
-- 130 --
-- 5 6.5
-- 7 --
-- 225 422
-- 455 --
T
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
I
RRM
FM
Diode Forward Voltage IF = 50A
Repetitive Reverse Current VR = V
RRM
= 25°C
C
= 100°C
T
C
TC = 25°C
= 100°C
T
C
-- 1.1 1.5
-- 1.0 --
-- -- 8
-- 5 --
T
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
Inverter
Brake
Converter R
θJC
R
θJC
R
θJC
R
θJC
θJC
Weight Weight of Module 270 -- g
Junction-to-Case (IGBT Part, per 1/6 Module) -- 0.625 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.6 °C/W
Junction-to-Case (IGBT Part) -- 0.625 °C/W
Junction-to-Case (DIODE Part) -- 1.6 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.5 °C/W
V
ns
A
nC
V
mA
©2001 Fairchild Semiconductor Corporation FMC7G50US60 Rev. A3
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