Fairchild Semiconductor FMC7G30US60 Datasheet

October 2001

FMC7G30US60

FMC7G30US60

Compact & Complex Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters wher e short circuit
ruggedness is a required feature.

Features

• UL Certified No. E209204

• Short circuit rated 10us @ T

• High speed switching

• Low saturation voltage : V

• High input impedance

• Built in brake and 3 phase rectifier circuit

• Fast & soft anti-parallel FWD

Applications

• AC & DC motor controls

• General purpose inverters

• Robotics

• Servo controls

= 100°C, V

C

(sat) = 2.2 V @ IC = 30A

CE

GE

= 15V

IGBT

Package Code : 21PM-BA

PNP1

GU

R
S
T

B

EU

GB

E

-GU

GV

EV

U

-GV

GW

EW

V

-GW

W

Internal Circuit Diagram

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Description FMC7G30US60 Units

Inverter
&
Brake

Converter

Common

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

SC

V

RRM

I

O

I

FSM
2

I

t

T

J

T

STG

V

ISO

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C30 A
Pulsed Collector Current 60 A
Diode Continuous Forward Current @ TC = 100°C30 A
Diode Maximum Forward Current 60 A
Maximum Power Dissipation @ TC = 25°C 125 W
Short Circuit Withstand Time @ TC = 100°C10 us
Repetitive Peak Reverse Voltage 1200 V
Average Output Rectified Current 30 A
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive

1 Cycle Surge Current 369 A

300 A

2

s
Operating Junction Temperature -40 to +150 °C
Storage Temperature Range -40 to +125 °C
Isolation Voltage @ AC 1minute 2500 V

Mounting Torque Mounting part Screw @ M4 1.25 N.m

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3

FMC7G30US60

Electrical Characteristics of the IGBT

@ Inverter & Brake

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES
VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 30mA, VCE = V
Collector to Emitter Saturation Voltage IC = 30A

,

VGE = 15V

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 310 -- pF
Reverse Transfer Capacitance -- 74 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 1970 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1.74 2.4 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 2.49 3.4 mJ

ts

T

sc

Q

g

Q

ge

Q

gc

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 65 -- ns
Turn-Off Delay Time -- 54 80 ns
Fall Time -- 138 200 ns
Turn-On Switching Loss -- 0. 92 -- mJ

= 300 V, IC = 30A,

V

CC

= 7Ω, V

R

G

Inductive Load, T

GE

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 0.82 -- mJ

Turn-On Delay Time

-- 34 -- ns
Rise Time -- 67 -- ns
Turn-Off Delay Time -- 60 90 ns
Fall Time -- 281 400 ns
Turn-On Switching Loss -- 0. 93 -- mJ

V

= 300 V, IC = 30A,

CC

R

= 7Ω, V

G

GE

= 15V,

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 1.56 -- mJ

= 300 V, V

V

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 17 25 nC
Gate-Collector Charge -- 39 55 nC

CC

@

TC = 100°C

= 300 V, IC = 30A,

V

CE

= 15V

V

GE

= 15V

GE

10 -- -- us

-- 85 120 nC

©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3

FMC7G30US60

Electrical Characteristics of the DIODE

@ Inverter & Brake

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 30A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery
Current

= 30A

F

di / dt = 60 A/us

Diode Reverse Recovery Charge

Electrical Characteristics of the DIODE

= 25°C

C

= 100°C

T

C

= 25°C

T

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

@ Converter

TC = 25°C unless otherwise noted

-- 2.0 2.8

-- 2.0 --

-- 90 180

-- 130 --

-- 2.2 3.4

-- 3.4 --

-- 400 600

-- 880 --

T

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

I

RRM

FM

Diode Forward Voltage IF = 30A

Repetitive Reverse Current VR = V

RRM

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

-- 1.1 1.5

-- 1.0 --

-- -- 8

-- 5 --

T

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

Inverter

Brake
Converter R

θJC

R

θJC

R

θJC

R

θJC
θJC

Weight Weight of Module 270 -- g

Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.0 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.2 °C/W
Junction-to-Case (IGBT Part) -- 1.0 °C/W
Junction-to-Case (DIODE Part) -- 2.2 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.0 °C/W

V

ns

A

nC

V

mA

©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3