Fairchild Semiconductor FMC6G20US60 Datasheet

June 2001

FMC6G20US60

FMC6G20US60

Compact & Complex Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters wher e short circuit
ruggedness is a required feature.

Features

• UL Certified No. E209204

• Short circuit rated 10us @ T

• High speed switching

• Low saturation voltage : V

• High input impedance

• Built in 3 phase rectifier circuit

• Fast & soft anti-parallel FWD

Applications

• AC & DC motor controls

• General purpose inverters

• Robotics

• Servo controls

= 100°C, V

C

(sat) = 2.2 V @ IC = 20A

CE

GE

= 15V

IGBT

Package Code : 21PM-AA

PP1

GU

R
S
T

NB

EU

GU

GV

EV

U

GV

GW

EW

V

GW

W

E

Internal Circuit Diagram

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Description FMC7G20US60 Units

Inverter

Converter

Common

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

SC

V

RRM

I

O

I

FSM
2

I

t

T

J

T

STG

V

ISO

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C20 A
Pulsed Collector Current 40 A
Diode Continuous Forward Current @ TC = 100°C20 A
Diode Maximum Forward Current 40 A
Maximum Power Dissipation @ TC = 25°C57 W
Short Circuit Withstand Time @ TC = 100°C10 us
Repetitive Peak Reverse Voltage 1200 V
Average Output Rectified Current 20 A
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive

200 A

1 Cycle Surge Current 164 A
Operating Junction Temperature -40 to +150 °C
Storage Temperature Range -40 to +125 °C
Isolation Voltage @ AC 1minute 2500 V

Mounting Torque Mounting part Screw @ M4 1.25 N.m

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

©2001 Fairchild Semiconductor Corporation

2

s

FMC6G20US60 Rev. A3

FMC6G20US60

Electrical Characteristics of the IGBT

@ Inverter

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES
VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 20mA, VCE = V
Collector to Emitter Saturation Voltage IC = 20A

,

VGE = 15V

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 254 -- pF
Reverse Transfer Capacitance -- 47 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 1323 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 0.99 1.4 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1.6 2.2 mJ

ts

T

sc

Q

g

Q

ge

Q

gc

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 49 -- ns
Turn-Off Delay Time -- 48 70 ns
Fall Time -- 152 200 ns
Turn-On Switching Loss -- 0. 52 -- mJ

= 300 V, IC = 20A,

V

CC

= 10Ω, V

R

G

Inductive Load, T

GE

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 0.47 -- mJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 51 -- ns
Turn-Off Delay Time -- 52 75 ns
Fall Time -- 311 400 ns
Turn-On Switching Loss -- 0. 57 -- mJ

V

= 300 V, IC = 20A,

CC

R

= 10Ω, V

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 1.03 -- mJ

= 300 V, V

V

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 10 15 nC
Gate-Collector Charge -- 25 40 nC

CC

@

TC = 100°C

= 300 V, IC = 20A,

V

CE

= 15V

V

GE

= 15V

GE

10 -- -- us

-- 55 80 nC

©2001 Fairchild Semiconductor Corporation FMC6G20US60 Rev. A3

FMC6G20US60

Electrical Characteristics of the DIODE

@ Inverter

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 20A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery
Current

= 20A

F

di / dt = 40 A/us

Diode Reverse Recovery Charge

Electrical Characteristics of the DIODE

= 25°C

C

= 100°C

T

C

= 25°C

T

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

@ Converter

TC = 25°C unless otherwise noted

-- 2.0 2.8

-- 2.3 --

-- 75 150

-- 110 --

-- 1.2 1.8

-- 1.8 --

-- 180 300

-- 400 --

T

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

I

RRM

FM

Diode Forward Voltage IF = 20A

Repetitive Reverse Current VR = V

RRM

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

-- 1.1 1.5

-- 1.0 --

-- -- 8

-- 5 --

T

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

Inverter
Converter R

θJC

R

θJC
θJC

Weight Weight of Module 60 -- g

Junction-to-Case (IGBT Part, per 1/6 Module) -- 2.19 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 3.0 °C/W
Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.7 °C/W

V

ns

A

nC

V

mA

©2001 Fairchild Semiconductor Corporation FMC6G20US60 Rev. A3