Fairchild Semiconductor FMBS549 Datasheet
Thermal Characteristics
T
FMBS549
FMBS549
NC
C
E
B
C
C
Package: SuperSOT-6 single
Mark : .S1
Pin 1
PNP Low Saturation Transistor
ThIs device is designed with high current gain and low saturation voltage with collector currents up to
2A continous. Sourced from process PB.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, TSTG
Collector Current- Continuous
- Peak Pulse Current
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
A = 25°C unless otherwise noted
Value
1
2
Units
V30Collector-Emitter Voltage
V35Collector-Base Voltage
V5Emitter-Base Voltage
A
A
°C-55 to +150Operating and Storage Junction Temperature Range
P
D
R
θJA
*Device mounted on a 1 in2 pad of 2 oz copper.
1999 Fairchild Semiconductor fmbs549.lwp Rev A PrPB
UnitsMaxCharacteristics Symbol
mW700Total Device Dissipation*
°C/W180Thermal Resistance, Junction to Ambient, total
PNP Low Saturation transistor
FMBS549
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
Vcb = 30 V
Vcb = 30 V, Ta= 100C
Vce = 2V, Ic = 50 mA
Vce = 2V, Ic = 500 mA
Vce = 2V, Ic = 1 A
Vce = 2V, Ic = 2 A
Vce = 0.8V, Ic = 500 m A
Ic = 250 mA, Ib = 25 mA
Ic = 500 mA, Ib = 50 mA
Ic = 1 A, Ib = 100 mA
Ic = 2 A, Ib = 200 mA
70
100
80
40
100
100
10
300
200
350
500
750
UnitsMaxMinTest ConditionsParameterSymbol
V30Ic = 10 mACollector to Emitter Voltage
V 35Ic = 100 uACollector to Base Voltage
V5Ie = 100 uAEmitter to Base Voltage
nA
uA
nA100Veb = 4 V Emitter Cutoff Current
-
mV
mV
mV
mV
V1.25Ic = 1 A, Ib = 100 mABase-Emitter Saturation Voltage
V1Ic = 1 A, Vce = 2 VBase-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
C
f
1999 Fairchild Semiconductor fmbs549.lwp Rev A PrPB
obo
T
pF25Vcb = 10V, f = 1MHzOutput Capacitance
MHz100Vce = 5 V, Ic = 100mA, f = 100MHzCurrent Gain - Bandwidth Product
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