Fairchild Semiconductor FMBL1G200US60 Datasheet

July 2001

FMBL1G200US60

FMBL1G200US60

Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters wher e short circuit
ruggedness is a required feature.

Features

• UL Certified No. E209204

• Short circuit rated 10us @ T

• High speed switching

• Low saturation voltage : V

• High input impedance

• Fast & soft anti-parallel FWD

Application

• Boost (Step Up) Converter

= 100°C, VGE = 15V

C

= 2.2 V @ IC = 200A

CE(sat)

Package Code : 7PM-BB

E1/C2

C1

G2

IGBT

E2

E2

Internal Circuit Diagram

Absolute Maximum Ratings T

Symbol Description FMBL1G200US60 Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

T

SC

P

D

Operating Junction Temperature -40 to +150 °C

T

J

T

stg

V

iso

Mounting
Torque

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 200 A
Pulsed Collector Current 400 A
Diode Continuous Forward Current @ TC = 100°C 200 A
Diode Maximum Forward Current 400 A
Short Circuit Withstand Time @ TC = 100°C10 us
M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C 830 W

Storage Temperature Range -40 to +125 °C
Isolation Voltage @ AC 1minute 2500 V
Power Terminals Screw : M5 2.0 N.m
Mounting Screw : M6 2.5 N.m

= 25°C unless otherwise noted

C

FMBL1G200US60

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES
VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 0V, IC= 200mA 5.0 -- 8.5 V
Collector to Emitter

Saturation Voltage

= 200A, VGE = 15V

I

C

-- 2.2 2.8 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 2170 -- pF
Reverse Transfer Capacitance -- 500 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 14600 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 12.3 -- mJ

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 16.6 -- mJ

ts

T

sc

Q

g

Q

ge

Q

gc

Turn-On Delay Time
Rise Time -- 75 -- ns
Turn-Off Delay Time -- 20 0 250 ns
Fall Time -- 90 200 ns
Turn-On Switching Loss -- 3.6 -- mJ

= 300 V, IC = 200A,

V

CC

= 1.8Ω, V

R

G

GE

Inductive Load, T

= 15V

= 25°C

C

Turn-Off Switching Loss -- 8 .7 -- mJ

Turn-On Delay Time
Rise Time -- 100 -- ns
Turn-Off Delay Time -- 29 0 -- ns
Fall Time -- 210 -- ns
Turn-On Switching Loss -- 4.8 -- mJ

= 300 V, IC = 200A,

V

CC

= 1.8Ω, V

R

G

Inductive Load, T

GE

= 15V

= 125°C

C

Turn-Off Switching Loss -- 11.8 -- mJ

= 300 V, V

V

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 170 -- nC
Gate-Collector Charge -- 365 -- nC

CC

@

TC = 100°C

= 300 V, IC = 200A,

V

CE

= 15V

V

GE

= 15V

GE

-- 120 -- ns

-- 220 -- ns

10 -- -- us

-- 820 900 nC

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A

FMBL1G200US60

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

= 25°C

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 200A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery
Current

= 200A

F

di / dt = 400 A/us

Diode Reverse Recovery Charge

C

T

C

T

C

T

C

T

C

T

C

T

C

T

C

= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C

-- 1.9 2.8

-- 1.8 --

-- 90 130

-- 130 --

-- 19 25

-- 25 --

-- 855 1600

-- 1625 --

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJC

R

θCS

Weight Weight of Module -- 270 g

Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.15 °C/W
Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.35 °C/W
Case-to-Sink (Conductive grease applied) 0. 03 -- °C/W

V

ns

A

nC

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A