Fairchild Semiconductor FMBA0656 Datasheet
transistor 2 is
PNP
device.
Discrete Power
FMBA0656
FMBA0656
Signal Technologies
&
C2
E1
C1
B2
E2
B1
Package: SuperSOT-6
Device Marking: .003
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
Absolute Maximum Ratings T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
STG
T
J
R
θJA
*Pd total, for both transistors. For each transistor, Pd = 350mW.
A = 25°C unless otherwise noted
Value
Units
V80Collector-Emitter Voltage
V80Collector-Base Voltage
V4Emitter-Base Voltage
mA500Collector Current (continuous)
W0.7Power Dissipation @Ta = 25°C*
°C-55 to +150Storage Temperature Range
°C150Junction Temperature
°C/W180Thermal Resistance, Junction to Ambient
Electrical Characteristics T
BV
CEO
BV
CBO
BV
EBO
1997 Fairchild Semiconductor Corporation Page 1 of 2
A = 25°C unless otherwise noted
ParameterSymbol
MinTest Conditions
fmba0656.lwpPr33&73(Y3)
UnitsMax
V80Ic = 1.0 mACollector to Emitter Voltage
V80Ic = 100 uACollector to Base Voltage
V4Ie = 100 uAEmitter to Base Voltage
NPN & PNP Complementary Dual Transistor
FMBA0656
(continued)
Electrical Characteristics T
A = 25°C unless otherwise noted
ParameterSymbol
I
CBO
I
CEO
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain
Vce = 1 V, Ic = 10 mA
Vce = 1 V, Ic = 100 mA
Small - Signal Characteristics
f
T
MinTest Conditions
100
UnitsMax
nA100Vcb = 80 V Collector Cutoff Current
nA100Vce = 60 V Collector Cutoff Current
-100
V0.25Ic = 100 mA, Ib = 10 mACollector-Emitter Saturation Voltage
V1.2Ic = 100 mA, Vce = 1 VBase-Emitter On Voltage
-50Vce = 1 V, Ic = 100 mA, f = 100 MHzCurrent Gain - Bandwidth Product
1997 Fairchild Semiconductor Corporation Page 2 of 2
fmba0656.lwpPr33&73(Y3)
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