FMB5551
FMB5551
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
C1
C2
E1
• This device is designed for general purpose high voltage amplifiers
and gas discharge display driving.
• Sourced from process 16.
• See MMBT5551 for characteristics.
Absolute Maximum Ratings
B1
Ta=25°C unless otherwise noted
B2
E2
SuperSOT-6
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
R
θJA
* Pd total, for both transistors. For each transistor, Pd = 350mW.
Electrical Characteristics
Collector-Emitter Voltage 160 V
Collector-Base Voltage 180 V
Emitter-Base Voltage 6 V
Collector Current (DC) 600 mA
Collector Dissipation (Ta=25°C) * 0.7 W
Junction Temperature 150 °C
Storage T emperature Range - 55 ~ 150 °C
Thermal Resistance, Junction to Ambient 180 °C/W
Ta=25°C unless otherwise noted
Symbol Parameter T est Condition Min. Typ. Max. Units
Off Characteristics
BV
BV
BV
I
CBO
I
EBO
CEO
CBO
EBO
Collector-Emitter Voltage IC = 1mA 160 V
Collector-Base Voltage IC = 10µA180V
Emitter-Base Voltage IE = 10µA6V
Collector Cut-off Current VCB = 120V
= 120V, T = 100°C
V
CB
5050nA
Emitter Cut-off Current VEB = 4V 50 nA
On Characteristics
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
BE
DC Current Gain VCE = 5V, IC = 1mA
= 5V, IC = 10mA
V
CE
V
= 5V, IC = 50mA
CE
= 50mA, IB = 5mA
I
C
= 50mA, IB = 5mA
I
C
80
80
30
250
0.15
0.2
1
1
Small Signal Characteristics TYPICAL
C
ob
C
ib
f
T
Output Capacitance VCB = 10V, f = 1MHz 6 pF
Input Capacitance VCB = 0.5V, f = 1MHz 20 pF
Current gain Bandwidth Product VCE = 10V, IC = 10mA
100 300 MHz
f = 100MHz
NF Noise Figure V
h
FE
Small Signal Current Gain VCE = 10V, IC = 1mA
= 5V, IC = 200µA
CE
f = 1MHz, R
f = 1KHz
= 2kΩ, B = 200Hz
S
50 250
8dB
µA
V
V
©2002 Fairchild Semiconductor Corporation Rev. A, January 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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©2002 Fairchild Semiconductor Corporation Rev. H4
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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The datasheet is printed for reference information only.