Fairchild Semiconductor FMB3946 Datasheet
Thermal Characteristics
T
transistor 2 is
PNP
device.
s complementary dual device was designed for use as a general purpose amplifier and switch. The useful
FMB3946
Discrete Power
Signal Technologies
&
FMB3946
C2
E1
C1
B2
E2
B1
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
Thi
dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23
(NPN) and Process 66 (PNP).
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
Package: SuperSOT-6
Device Marking: .002
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
Value
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
700
5.6
Units
V40Collector-Emitter Voltage
V40Collector-Base Voltage
V5Emitter-Base Voltage
mA200Collector Current
°C-55 to +150Operating and Storage Junction Temperature Range
UnitsMaxCharacteristics Symbol
mW
mW/°C
°C/W180Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Page 1 of 2
fmb3946.lwpPr23&66(Y2)
NPN & PNP Complementary Dual Transistor
FMB3946
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
DC Current Gain
A = 25°C unless otherwise noted
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 1.0mA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 50mA
Vce = 1V, Ic = 100mA
UnitsMaxMinTest ConditionsParameterSymbol
V40Ic = 1.0 mACollector to Emitter Voltage
V 40Ic = 10 uACollector to Base Voltage
V5Ie = 10 uAEmitter to Base Voltage
nA50Vcb = 30 V Collector Cutoff Current
nA50Veb = 4.0 VEmitter Cutoff Current
-40
70
100
60
30
V0.25Ic = 10mA, Ib = 1mACollector-Emitter Saturation Voltage
V0.9Ic = 10mA, Ib = 1mABase-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS TYP
C
OB
C
IB
f
T
Noise FigureNF
Rs = 1kohms, f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS TYP
Delay Time
t
d
t
r
Storage Time
t
s
t
f
Ic = 10 mA, Ib1 = 1 mA
Ib1 = Ib2 = 1 mA
pF3Vcb = 5V, f = 1MHzOutput Capacitance
pF7Veb = 0.5V, f = 1MHzInput Capacitance
MHz450Vce = 20V, Ic = 10mA, f = 100MHzCurrent Gain - Bandwidth Product
dB2.5Vce = 5V, Ic = 100uA,
ns18Vcc = 3V, Vbe = 0.5V,
ns20Rise Time
ns150Vcc = 3V,Ic = 10 mA,
ns40Fall Time
1997 Fairchild Semiconductor Corporation
Page 2 of 2
fmb3946.lwpPr23&66(Y2)
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