Fairchild Semiconductor FMB3904, FFB3904 Datasheet
Discrete POWER & Signal
Technologies
FFB3904 / FMB3904 / MMPQ3904
FFB3904
E2
B2
C1
pin #1
E1
SC70-6
Mark: .1A
B1
C2
FMB3904
C2
E1
C1
B1
pin #1
SuperSOT-6
Mark: .1A
B2
E2
MMPQ3904
B4
E4
B3
E3
B2
E2
B1
E1
C2
C1
SOIC-16
C1
C2
C3
C3
C4
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* T
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
= 25°C unless otherwise noted
A
C
°
C4
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FFB3904 FMB3904 MMPQ3904
P
D
R
θ
JA
1998 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
300
2.4
700
5.6
415 180
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB3904 / FMB3904 / MMPQ3904
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage
Emitter-Base B reakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Base Cutoff Current VCE = 30 V, V
= 0 50 nA
EB
60 V
6.0 V
Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA
ON CHARACTERISTICS*
h
FE
V
V
CE(sat)
BE(sat)
DC Current Gain IC = 0.1 mA, VCE = 1.0 V
I
= 1.0 mA, VCE = 1.0 V
C
= 10 mA, VCE = 1.0 V
I
C
= 50 mA, VCE = 1.0 V
I
C
= 100 mA, VCE = 1.0 V
I
C
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
= 50 mA, IB = 5.0 mA
I
C
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
= 50 mA, IB = 5.0 mA
I
C
40
70
100
300
60
30
0.2
0.3
0.65 0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz
Output Capacitance VCB = 5.0 V, IE = 0,
f = 1.0 MHz
Input Capacitance VEB = 0.5 V, IC = 0,
f = 1.0 MHz
(except MMPQ3904)
IC = 100 µA, VCE = 5.0 V,
=1.0kΩ, f=10 Hz to 15.7 kHz
R
S
450 MHz
2.5 pF
6.0 pF
2.0 dB
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 3.0 V, VBE = 0.5 V, 18 ns
Rise Time IC = 10 mA, IB1 = 1.0 mA 20 ns
Storage Time VCC = 3.0 V, IC = 10mA 150 ns
Fall Time IB1 = IB2 = 1.0 mA 25 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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