Fairchild Semiconductor FMB2907A, FFB2907A Datasheet
Discrete POWER & Signal
Technologies
FFB2907A / FMBT2907A / MMPQ2907A
FFB2907A
E2
B2
C1
E1
B1
pin #1
SC70-6
Mark: .2F
C2
FMB2907A
C2
E1
C1
E2
B1
pin #1
SuperSOT-6
Mark: .2F
B2
MMPQ2907A
B4
E4
B3
E3
B2
E2
B1
E1
C3
C2
C2
C1
SOIC-16
C1
C3
C4
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings* T
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitt er Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 600 mA
Operating and Storage Junction Temperature Range -55 to +150
= 25°C unless otherwise noted
A
°C
C4
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FFB2907A FMB2907A MMPQ2907A
P
D
R
θ
JA
1998 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
300
2.4
700
5.6
415 180
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMBT2907A / MMPQ2907A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
B
I
CEX
I
CBO
Collector-Emitt er Breakdown
IC = 10 mA, IB = 0 60 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current VCB = 30 V, V
Collector Cutoff Current VCE = 30 V, V
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
EB
BE
Collector Cutoff Current VCB = 50 V, IE = 0
= 50 V, IE = 0, TA = 125°C
V
CB
60 V
5.0 V
= 0.5 V 50 nA
= 0.5 V 50 nA
0.02
20
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
DC Current Gain IC = 0.1 mA, VCE = 10 V
= 1.0 mA, VCE = 10 V
I
C
= 10 mA, VCE = 10 V
I
C
= 150 mA, VCE = 10 V*
I
C
= 500 mA, VCE = 10 V*
I
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
)
C
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
75
100
100
100
50
300
0.4
1.6
1.3
2.6
µA
µA
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V,
Output Capacitance VCB = 10 V, IE = 0,
Input Capacitance VEB = 2.0 V, IC = 0,
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time VCC = 30 V, IC = 150 mA, 30 ns
Delay Time IB1 = 15 mA 8.0 ns
Rise Time 20 ns
Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns
Storage Time IB1 = IB2 = 15 mA 60 ns
Fall Time 20 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
250 MHz
6.0 pF
f = 100 kHz
12 pF
f = 100 kHz
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