Fairchild Semiconductor FMB2227A Datasheet
Discrete Power
FMB2227A
FMB2227A
Signal Technologies
&
C2
E1
C1
B2
E2
B1
Package: SuperSOT-6
Device Marking: .001
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a medium power amplifier and switch requiring
collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).
Absolute Maximum Ratings T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
STG
T
J
R
θJA
A = 25°C unless otherwise noted
Value
Units
V30Collector-Emitter Voltage
V60Collector-Base Voltage
V5Emitter-Base Voltage
mA500Collector Current
W0.7Power Dissipation @Ta = 25°C*
°C-55 to +150Storage Temperature Range
°C150Junction Temperature
°C/W180Thermal Resistance, Junction to Ambient
Electrical Characteristics T
BV
CEO
BV
CBO
BV
EBO
1998 Fairchild Semiconductor Corporation
A = 25°C unless otherwise noted
ParameterSymbol
Page 1 of 2
MinTest Conditions
2227A.lwpPr19&63(Y1)
UnitsMax
V30Ic = 10 mACollector to Emitter Voltage
V 60Ic = 10 uACollector to Base Voltage
V5Ie = 10 uAEmitter to Base Voltage
NPN & PNP Complementary Dual Transistor
FMB2227A
(continued)
Electrical Characteristics T
ParameterSymbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
Vce = 10V, Ic = 1.0mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
Vce = 10V, Ic = 300mA
Ic = 150mA, Ib=15mA
Ic = 300mA, Ib=30mA
MinTest Conditions
75
100
30
Small - Signal Characteristics Typical
C
OB
C
IB
f
T
UnitsMax
nA 30 Vcb = 50V Collector Cutoff Current
nA 30Veb = 3.0VEmitter Cutoff Current
-50
V0.4
1.4
V1.3Ic = 150mA, Ib=15mABase-Emitter Saturation Voltage
pF6Vcb = 10V, f = 1.0MHzOutput Capacitance
pF20Veb = 0.5V, f = 100kHzInput Capacitance
MHz250Vce = 20V, Ic = 50mA, f = 100MHzCurrent Gain - Bandwidth Product
1998 Fairchild Semiconductor Corporation
Page 2 of 2
2227A.lwpPr19&63(Y1)
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