Fairchild Semiconductor FMB200 Datasheet
Discrete POWER & Signal
FMB200
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT-6
Mark: .N2
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 68.
FMB200
Technologies
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitt er Voltage 45 V
Collector-Base Voltage 60 V
Emitter-Base Volt age 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FMB200
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
700
5.6
Thermal Resistance, Junction to Ambient 180
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
FMB200
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
BV
BV
I
CBO
I
CES
I
EBO
CBO
CEO
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
I
= 10 µA, IB = 0
C
IC = 1.0 mA, IE = 0 45 V
60 V
Voltage*
Emitter-Base Breakdown Voltage
I
= 10 µA, IC = 0
E
6.0 V
Collector Cutoff Current VCB = 50 V, IE = 0 50 nA
Collector Cutoff Current VCE = 40 V, IE = 10 50 nA
Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
DC Current Gain
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base-Emitter S aturation Voltage IC = 10 mA, IB = 1.0 mA
)
I
= 100 µA, VCE = 1.0 V
C
= 10 mA, VCE = 1.0 V
I
C
= 150 mA, VCE = 5.0 V*
I
C
= 200 mA, IB = 20 mA*
I
C
= 200 mA, IB = 20 mA*
I
C
80
100
100
450
350
0.2
0.4
0.85
1.0
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF Noise Figure
Current Gain - Bandwidth Product V
= 20 V, IC = 20 mA 300 MHz
CE
Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
= 100 µA, VCE = 5.0 V,
I
C
= 2.0 kΩ, f = 1.0 kHz
R
G
2.5 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V
V
V
V
Typical Characteristics
T y pical Pulsed Current Gain
vs Collector Current
500
125 °C
400
300
25 °C
200
- 40 °C
100
0
0.01 0.1 1 10 100
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
β
= 10
0.2
0.15
0.1
0.05
0
0.1 1 10 100 300
V - COLLECTOR EMITTER VOLTAGE (V)
CESAT
I - COLLECTOR CURRENT (mA)
C
125 ºC
25 °C
- 40 ºC
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