Fairchild Semiconductor FMB1020 Datasheet
Thermal Characteristics
T
FMB1020
Discrete Power
Signal Technologies
transistor 2 is
PNP
device.
&
FMB1020
Package: SuperSOT-6
Device Marking: .004
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This dual complementary device was designed for use as a general purpose amplifier applications at
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
V
CEO
V
CBO
V
EBO
I
C
T
J, TSTG
P
D
R
θJA
ParameterSymbol
Total Device Dissipation, total
per side
Value
Units
V45Collector-Emitter Voltage
V60Collector-Base Voltage
V6Emitter-Base Voltage
mA500Collector Current
°C-55 to +150Operating and Storage Junction Temperature Range
UnitsMaxCharacteristics Symbol
mW700
350
°C/W180Thermal Resistance, Junction to Ambient, total
1998 Fairchild Semiconductor Corporation
Page 1 of 2
fmb1020.lwpPr10&68(Y4)
NPN & PNP Complementary Dual Transistor
FMB1020
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
A = 25°C unless otherwise noted
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 100mA
Vce = 5V, Ic = 150mA
Ic = 10mA, Ib = 1mA
Ic = 200mA, Ib = 20mA
Ic = 10mA, Ib = 1mA
Ic = 200mA, Ib = 20mA
80
100
100
100
UnitsMaxMinTest ConditionsParameterSymbol
V45Ic = 1.0 mACollector to Emitter Voltage
V 60Ic = 10 uACollector to Base Voltage
V6Ie = 10 uAEmitter to Base Voltage
nA50Vcb = 50 V Collector Cutoff Current
nA50Vce = 40 V Collector Cutoff Current
nA50Veb = 4 V Emitter Cutoff Current
-
450
350
V0.2
0.4
V0.85
1.0
SMALL SIGNAL CHARACTERISTICS TYP
C
f
OB
T
Noise FigureNF
pF4.5Vcb = 10V, f = 1MHzOutput Capacitance
MHz300Vce = 20V, Ic = 20mA, f = 100MHzCurrent Gain - Bandwidth Product
dB2.5Vce = 5V, Ic = 100uA,
Rs = 2kohms, f = 1 kHz
1998 Fairchild Semiconductor Corporation
Page 2 of 2
fmb1020.lwpPr10&68(Y4)
Loading...