Fairchild Semiconductor FMB100 Datasheet
FMB100
FMB100
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWER & Signal
Technologies
Symbol Parameter Value Units
V
CEO
Collector-Emitte r V oltage 45 V
V
CBO
Collector-Base Voltage 75 V
V
EBO
Emitter-Base Volt age 6.0 V
I
C
Collector Current - Continuous 500 mA
TJ, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics T
A
= 25°C unless otherwise noted
Symbol Characteristic Max Units
FMB100
P
D
Total Device Dissipation
Derate above 25°C
700
5.6
mW
mW/°C
R
θ
JA
Thermal Resistance, Junction to Ambient 180
°C/W
1998 Fairchild Semiconductor Corporation
SuperSOT-6
Mark: .NA
C1
E1
C2
B1
E2
B2
pin #1
FMB100
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10 µA, IB = 0
75 V
BV
CEO
Collector-Emitter Breakdown
Voltage*
IC = 1 mA, IE = 0 45 V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10 µA, IC = 0
6.0 V
I
CBO
Collector Cutoff Current VCB = 60 V 50 nA
I
CES
Collector Cutoff Current VCE = 40 V 50 nA
I
EBO
Emitter Cutoff Current VEB = 4 V 50 nA
h
FE
DC Current Gain
I
C
= 100 µA, VCE = 1.0 V
I
C
= 10 mA, VCE = 1.0 V
I
C
= 100 mA, VCE = 1.0 V*
I
C
= 150 mA, VCE = 5.0 V*
80
100
100
100
450
350
V
CE(
sat
)
Collector-Em i tter Saturation Vol t age IC = 10 mA, IB = 1.0 mA
I
C
= 200 mA, IB = 20 mA*
0.2
0.4
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
I
C
= 200 mA, IB = 20 mA*
0.85
1.0
V
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
1 10 100 400
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β
= 10
f
T
Current Gain - Bandwidth Product V
CE
= 20 V, IC = 20 mA 300 MHz
C
obo
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 3.5 pF
NF Noise Figure
I
C
= 100 µA, VCE = 5.0 V,
R
G
= 2.0 kΩ, f = 1.0 kHz
2.5 dB
Symbol Parameter Test Conditions Min Typ Max Units
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