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FM27C256 262,144-Bit (32K x 8) High Performance CMOS EPROM
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FM27C256
Absolute Maximum Ratings (Note 1)
Storage Temperature -65°C to +150°C
All Input Voltages except A9 with
Respect to Ground -0.6V to +7V
VPP and A9 with Respect
to Ground -0.7V to +14V
VCC Supply Voltage with
Respect to Ground -0.6V to +7V
ESD Protection > 2000V
All Output Voltages with
Respect to Ground VCC + 1.0V to GND -0.6V
Operating Range
Range Temperature V
CC
Comm’l0°C to +70°C +5V ±10%
Industrial -40°C to +85°C +5V ±10%
Read Operation
DC Electrical Characteristics Over Operating Range with V
PP
= V
CC
Symbol Parameter Test Conditions Min Max Units
V
IL
Input Low Level -0.5 0.8 V
V
IH
Input High Level 2.0 VCC +1 V
V
OL
Output Low Voltage IOL = 2.1 mA 0.4 V
V
OH
Output High Voltage IOH = -2.5 mA 3.5 V
I
SB1
VCC Standby Current CE = VCC ±0.3V 100 µA
(Note 11) (CMOS)
I
SB2
VCC Standby Current (TTL) CE = V
IH
1mA
I
CC1
VCC Active Current CE = OE = VIL,f=5 MHz 35 mA
TTL Inputs Inputs = VIH or VIL, I/O = 0 mA
I
PP
VPP Supply Current VPP = V
CC
10 µA
V
PP
VPP Read Voltage VCC - 0.7 V
CC
V
I
LI
Input Load Current VIN = 5.5V or GND -1 1 µA
I
LO
Output Leakage Current V
OUT
= 5.5V or GND -10 10 µA
AC Electrical Characteristics Over Operating Range with V
PP
= V
CC
Symbol Parameter 90 100 120 150 200 Units
Min Max Min Max Min Max Min Max Min Max
t
ACC
Address to Output Delay
90 100 120 150 200 ns
t
CE
CE to Output Delay 90 100 120 150 200
t
OE
OE to Output Delay 35 50 50 50 50
t
DF
Output Disable to 30 30 35 45 45
(Note 2) Output Float
t
OH
Output Hold from 00000
(Note 2) Addresses,
CE or OE, Whichever
Occurred First
Capacitance (Note 2) T
A
= +25˚C, f = 1 MHz
Symbol Parameter Conditions Typ Max Units
C
IN
Input Capacitance VIN = 0V 6 12 pF
C
OUT
Output Capacitance V
OUT
= 0V 9 12 pF