Fairchild Semiconductor FES16BT, FES16AT, FES16JT, FES16HT, FES16GT Datasheet

Discrete POWER & Signal

FES16AT - FES16JT

FES16AT - FES16JT

Technologies

.185(4.70)
.175(4.44)

Features

• Low forward voltage drop.

• High surge current capacity.

• High current capability.

• High reliability.

PIN 1 +

PIN 2 -

CASE Positive

PIN 1 -

PIN 2 +

CASE N egative

Suffix “R”

.113( 2.87)
.103( 2.62)

+

CASE

+

.16(4.06)
.14(3.56)

.037( 0.94)
.027( 0.68)

.412( 10.5)

MAX

12

DIA

.154( 3.91)

.148( 3.74)

.594( 15.1)

.587( 14.91)

.56(14.22)
.53(13.46)

.27(6.86)
.23(5.84)

TO-220AC

.205( 5.20)
.195( 4.95)

Dimensions are in:

inches (mm)

.025(0.64)
.014(0.35)

16 Ampere Glass Passivated Super Fast Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistan ce, Junction to Ambient 16
Thermal Resistance, Junction to Lead 1.2
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150

= 25°C unless otherwise noted

A

= 100°C

A

16 A

250 A

7.81
62

mW/°C

C/W

°

C/W

°

.11(2.79)
.10(2.54)

W

C

°

C

°

.055(1.40)
.045(1.14)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT

Peak Repetitive Reverse Voltage 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage 35 70 105 140 210 280 350 420 V
DC Blocking Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R

Maximum Rev erse Recovery Time

= 0.5 A, IR = 1.0 A, I

I

F

Maximum Forward Voltage @ 16.0A
Typical Junction Capacitance

V

= 4.0. f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

TA = 25°C

= 100°C

T

A

= 0.25 A

RR

50 100 150 200 300 400 500 600 V

10

500

35 50

0.975 1.3 1.5 V
170 145 pF

FES16AT - FES16JT, Rev. A

µ
µ

nS

A
A

T ypical Characteristics

FES16AT - FES16JT

Forward Current Derating Curve

20

16

12

SINGLE PHASE
HALF WAVE

8

60HZ
RESISTIVE OR
INDUCTIVE LOAD

4

.375" (9.0mm) LEAD

FORWARD CU RRENT (A)

LENGTHS

0

0 255075100125150175

AMBI ENT TEMPERATURE ( C)

º

Forward Charact eristics

100

FES16AT-FES16DT

10

FES16FT-FES16JT

1

0.1

FORWARD CURRENT (A)

0.01

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

FORWARD VOLTAGE (V)

º

T = 25 C

A

Pulse Width = 300µs
2% Duty Cycle

Non-Repetitive Surge Current

250

200

150

100

50

0

PEA K FORWARD SURG E CUR R EN T (A)

1 2 5 10 20 50 100

NUMBER OF CYCLES AT 60Hz

Reverse Characteristics

1000

µ

100

T = 100 C

º

A

10

º

T = 25 C

1

REVERSE CURRENT ( A)

0.1
0 20406080100120140

PER CENT OF R ATED PE AK REVERSE VO LT AGE (%)

A

300

250

200

50

Ω

NONINDUCTIVE

50V
(approx)

Ω

50
NONINDUCTIVE

Ω

50
NONINDUCTIVE

DUT

150

100

FES16FT-FES16JT

CAPACITANCE (pF)

50

0

1 2 5 10 20 50 100

REVERSE VOLTAGE (V)

(-)

Pulse
Generator
(Note 2)

OSCILLOSCOPE
(Note 1)

(+)

FES16AT- F E S 16D T

+0.5A

0

-0.25A

-1.0A

1.0cm SET TIME BASE FOR

trr

Reverse Recovery Time Characterstic and Test Circuit Diagram

Junction Capacitance

5/ 10 ns/ cm

FES16AT - FES16JT, Rev. A