Fairchild Semiconductor FES16JTR, FES16BTR, FES16ATR, FES16HTR, FES16GTR Datasheet
...
FES16AT - FES16JT
FES16AT - FES16JT
Features
Low forward voltage drop.
•
• High surge current capacity.
• High current capability.
• High reliability.
1
2
TO-220AC
PIN 1
PIN 3
Case Positive
PIN 1
PIN 3
Case Negative
Suffix "R"
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse
I
F(AV)
RRM
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
I
Non-repetitive Peak Forward Surge
FSM
Current
8.3 ms Single Half-Sine-Wave
T
stg
Storage Temperature Range -65 to +150 V
TJ Operating Junction Temperature -65 to +150 pF
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Parameter
= 100°C
A
= 25°C unless otherwise noted
A
Value
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
50 100 150 200 300 400 500 600 V
16 A
250
+
CASE
-
Units
A
Thermal Characteristics
Symbol
PD Power Dissipation 7.81 W
R
R
Thermal Resistance, Junction to Ambient 16
θJA
Thermal Resistance, Junction to Lead 1.2
θJL
Electrical Characteristics T
Symbol
VF Forward Voltage @ 8.0A 0.95 1.3 1.5 V
trr Reverse Recovery Time
I
IR
CT Total Capacitance
2001 Fairchild Semiconductor Corporation
F
Reverse Current @ rat ed V
V
Parameter
= 0.5 A, IR = 1.0 A, I
TA = 25°C
= 100°C
T
A
= 4.0. f = 1.0 MHz
R
Parameter
= 0.25 A
RR
R
Value
= 25°C unless otherwise noted
A
Device
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
35 50
10
500
170 145
FES16AT - FES16JT, Rev. C
Units
C/W
°
C/W
°
Units
ns
A
µ
A
µ
pF
T ypical Characteristics
FES16AT - FES16JT
20
[A]
F
16
12
SINGLE PHASE
HALF WAVE
8
60HZ
RESISTIVE OR
INDUCTIVE LOAD
4
.375" (9.0 m m ) LEAD
LENGTHS
0
0 255075100125150175
Average Rectified Forward Current, I
Ambient Temperature [ºC]
250
[A]
FSM
200
150
100
50
0
Peak Forward Surge Current, I
1 2 5 10 20 50 100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
100
FES16AT-FES16DT
10
[A]
F
FES16FT-FES16JT
1
0.1
Forward Current, I
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
º
T = 25 C
A
Pulse Width = 300µµµµs
2% Duty Cycle
Forward Voltage, VF [V]
1000
100
T = 100 C
º
[mA]
R
A
10
T = 25 C
º
A
1
Reverse Current, I
0.1
0 20406080100120140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
300
250
[pF]
T
200
150
100
FES16FT-FES16JT
50
Total Capacitance, C
0
12 51020 50100
Reverse Voltage, VR [V]
FES16AT- F E S 16D T
Figure 5. Total Capacitance
50
Ω
NONINDUCTIVE
50V
(approx)
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
Reverse Recovery Time Characterstic and Test Circuit Diagram
5/ 10 ns/ cm
2001 Fairchild Semiconductor Corporation
FES16AT - FES16JT, Rev. C
Loading...