Fairchild Semiconductor FEP16HTD, FEP16HTA, FEP16GTD, FEP16GTA, FEP16FTD Datasheet
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FEP16AT - FEP16JT
FEP16AT - FEP16JT
Features
•
Low forward voltage drop.
• High surge current capacity.
• High current capability.
• High reliability.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse
I
F(AV)
RRM
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
I
Non-repetitive Peak Forward Surge
FSM
Current
8.3 ms Single Half-Sine-Wave
T
stg
Storage Temperature Range -55 to +150
TJ Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Parameter
1
2
= 100°C
A
3
TO-220AB
= 25°C unless otherwise noted
A
Value
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
50 100 150 200 300 400 500 600 V
200
PIN 1
PIN 3
Positive CT
PIN 1
PIN 3
Negative CT
Suffix "A"
PIN 1
PIN 3
Doubler
Suffix "D"
+
CASE
PIN 2
-
CASE
PIN 2
AC
CASE
PIN 2
Units
16 A
A
C
°
C
°
Thermal Characteristics
Symbol
PD Power Dissipation 8.33 W
R
θJA
R
θJL
Thermal Resistance, Junction to Ambient 15
Thermal Resistance, Junction to Lead 2.2
Electrical Characteristics T
Symbol
VF Forward Voltage @ 8.0A 0.95 1.3 1.5 V
trr Reverse Recovery Time
I
IR
Reverse Current @ rated V
CT Total Capacitance
V
2001 Fairchild Semiconductor Corporation
Parameter
= 0.5 A, IR = 1.0 A, I
F
TA = 25°C
T
= 100°C
A
= 4.0. f = 1.0 MHz
R
Parameter
= 0.25 A
RR
R
Value
= 25°C unless otherwise noted
A
Device
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
35 50
10
500
85 60
FEP16AT - FEP16JT, Rev. C
Units
C/W
°
C/W
°
Units
ns
A
µ
A
µ
pF
T ypical Characteristics
FEP16AT - FEP16JT
20
[A]
F
16
12
SINGLE PHASE
HALF WAVE
8
60HZ
RESISTIVE OR
INDUCTIVE LOAD
4
.375" (9.0 m m) LEAD
LENGTHS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
Ambient Temperature [ºC]
200
[A]
FSM
160
120
80
40
0
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
100
FEP16AT-FEP16DT
10
[A]
F
1
0.1
Forward Current, I
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FEP16FT-FEP16JT
T = 25 C
º
A
Pulse Width = 300µµµµs
2% Duty Cycle
Forward Voltage, VF [V]
1000
100
[mA]
R
10
T = 100 C
º
A
1
T = 25 C
º
Reverse Current, I
0.1
0 20 40 60 80 100 120 140
A
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
100
90
[pF]
T
80
70
60
FEP16FT-FEP16JT
50
Total Capacitance, C
40
1 2 5 10 20 50 100
FEP16AT-FEP16DT
Reverse Voltage, VR [V]
50
Ω
NONINDUCTIVE
50V
(approx)
50
Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
Figure 5. Total Capacitance
+0.5 A
(-)
Pulse
Generator
(Note 2)
0
-0.25A
(+)
-1.0A
1.0cm SET TIME BASE FOR
trr
Reverse Recovery Time Characterstic and Test Circuit Diagram
5/ 10 ns/ cm
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
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