Fairchild Semiconductor FEP16JT, FEP16HT, FEP16GT, FEP16FT, FEP16DT Datasheet
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Discrete POWER & Signal
FEP16AT - FEP16JT
FEP16AT - FEP16JT
Technologies
0.185(4 .7 0)
0.175(4 .4 4)
0.025(0 .6 4)
0.014(0 .3 5)
0.11(2.79)
0.10(2.54)
Features
• Low forward voltage drop.
• High surge current capacity.
• High current capability.
• High reliability.
PIN 1
PIN 3
Positi v e CT
+
CASE
PIN 2
PIN 1
PIN 3
Nega tiv e CT
Suffix “A”
TO-220AB
Dimensions are in: inches (mm)
-
CASE
PIN 2
PIN 1
PIN 3
Doubler
Suffix “D”
AC
CASE
PIN 2
0.113(2.87)
0.103(2.62)
0.16(4.06)
0.14(3.56)
0.037(0.94)
0.027(0.68)
0.412(10.5)
MAX
2 3
1
0.594(15.1)
0.587(14.9)
0.105(2.67)
0.095(2.41)
0.154(3.91)
0.148(3.74)
0.27(6.86)
0.23(5.84)
0.5 6(1 4.22 )
0.5 3(1 3.46 )
16 Ampere Glass Passivated Super Fast Rectifiers
Absolute Maximum Ratings* T
Symbol P arameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JL
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Average Rectified Current
.375 " lead length @ T
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 15
Thermal Resistance, Junction to Lead 2.2
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150
= 25°C unless otherwise noted
A
= 100°C
A
16 A
200 A
8.33
66
mW/°C
°C/W
°C/W
W
°C
°C
0.055(1 .4 0)
0.045(1 .1 4)
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage 35 70 105 140 210 280 350 420 V
DC Blocking Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
Maximum Forward Voltage @ 8.0A
Typical Junction Capacitance
= 4.0. f = 1.0 MHz
V
R
1999 Fairchild Semiconductor Corporation
TA = 25°C
T
= 100°C
A
= 0.25 A
RR
50 100 150 200 300 400 500 600 V
10
500
35 50
0.95 1.3 1.5
85 60
FEP16AT - FEP16JT, Rev. A
µ
µ
nS
pF
A
A
V
T ypical Characteristics
FEP16AT - FEP16JT
Forward Current Derating Curve
20
16
12
SINGLE PHASE
HALF WAVE
8
60HZ
RESISTIVE OR
INDUCTIVE LOAD
4
.375" (9.0 m m) LEAD
FORWARD CURRENT (A)
LENGTHS
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Forward Characteristics
100
FEP16AT-FEP16DT
10
1
0.1
FORWAR D CURRENT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORW ARD VOLT AGE (V)
FEP16FT-FEP16JT
º
T = 25 C
A
Pulse Wi dth = 300µs
2% Duty Cycle
Non-Repetitive Surge Current
200
160
120
80
40
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER O F CYC LES AT 60Hz
Reverse Characteristics
1000
µ
100
T = 100 C
º
10
1
REV ERS E C URRENT ( A)
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PE AK REVER S E V OLTAGE (% )
A
T = 25 C
º
A
Junction Capacitance
100
90
80
70
60
FEP16AT-FEP16DT
CAPACITANCE (pF)
FEP16FT-FEP16JT
50
40
50
Ω
NONINDUCTIVE
50V
(approx)
50
Ω
NONINDUCTIVE
Ω
50
NONINDUCTIVE
DUT
1 2 5 10 20 50 100
OSCILLOSCOPE
(Note 1)
REVERSE VOLTAGE (V)
(-)
Pulse
Generator
(Note 2)
(+)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
Reverse Recovery Time Characterstic and Test Circuit Diagram
5/ 10 ns/ cm
FEP16AT - FEP16JT, Rev. A
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