Fairchild Semiconductor FDZ7064N Datasheet

January 2003

FDZ7064N

30V N-Channel Logic Level PowerTrench



BGA MOSFET

FDZ7064N

General Description

Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and R

. This BGA

DS(ON)

MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R

DS(ON)

.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R

specifications resulting in DC/DC power supply

DS(ON)

designs with higher overall efficiency.

Applications

• DC/DC converters

• Solenoid drive

Pin 1

Pin 1

D D

D

D

D

D

D

D

D

D

S

S

S

S

D

S

S

S

S

D

S

S

S

S

D

S

S

S

DG

Bottom

Features

• 13.5 A, 30 V. R
R

• Occupies only 14 mm
the area of SO-8

• Ultra-thin package: less than 0.80 mm height when
mounted to PCB

2

• 3.5 x 4 mm

Footprint

• High power and current handling capability.

F7064

= 8.0 mΩ @ VGS = 4.5 V

DS(ON)

= 7.0 mΩ @ VGS = 10 V

DS(ON)

2

of PCB area. Only 42% of

D

G

S

Top

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous

(Note 1a)

±12

13.5 A

V

– Pulsed 60
PD Power Dissipation (Steady State)
TJ, T

Operating and Storage Junction Temperature Range –55 to +150

stg

(Note 1a)

2.2 W
°C

Thermal Characteristics

R

θJA

R

θJB

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

(Note 1a)

(Note 1)

4.5

(Note 1)

Device Marking Device Reel Size Tape width Quantity

7064N FDZ7064N 13” 12mm 3000

2003 Fairchild Semiconductor Corporation

56

°C/W

0.6

FDZ7064N Rev. D2 (W)

FDZ7064N

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BV

DSS

∆T

J

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

I

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

GSSF

I

Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

GSSR

On Characteristics

V

GS(th)

∆V

GS(th)

∆TJ
R

DS(on)

Breakdown Voltage Temperature
Coefficient

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 60 A

D(on)

V

= 0 V, ID = 250 µA

GS

I

= 250 µA, Referenced to 25°C

D

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 4.5 V, ID = 13.5 A

= 10 V, ID = 14.5 A

V

GS

= 4.5 V, ID = 13.5A, TJ =125°C

V

GS

30 V

21

mV/°C

µA

0.8 1.2 2.0 V
–4.6

6.1

5.4

9.0

8.0

7.0
13

mV/°C

mΩ

gFS Forward Transconductance VDS = 10 V, ID = 13.5 A 92 S

Dynamic Characteristics

C

Input Capacitance 3843 pF

iss

C

Output Capacitance 522 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn–On Delay Time 10 20 ns

d(on)

(Note 2)

tr Turn–On Rise Time 9 18 ns
t

Turn–Off Delay Time 71 114 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 31 43 nC
Qgs Gate–Source Charge 8 nC
Qgd Gate–Drain Charge

= 15 V, V

V

DS

GS

f = 1.0 MHz

V

= 15 V, ID = 1 A,

DD

= 10 V, R

V

GS

V

= 15 V, ID = 13.5 A,

DS

= 4.5 V

V

GS

GEN

= 0 V,

209 pF

= 6 Ω

18 32 ns

7.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 1.8 A
VSD

Drain–Source Diode Forward
Voltage

trr Diode Reverse Recovery Time 30 nS
Qrr Diode Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the

θJA

circuit board side of the solder ball, R
chip carrier. R

θJC

and R

are guaranteed by design while R

θJB

, is defined for reference. For R

θJB

V

= 0 V, IS = 1.8 A

GS

I

= 13.5 A,

F

= 100 A/µs

d

iF/dt

, the thermal reference point for the case is defined as the top surface of the copper

θJC

is determined by the user's board design.

θJA

(Note 2)

0.7 1.2

35 nC

V

a) 56°C/W when

mounted on a 1in2 pad
of 2 oz copper

b) 119°C/W when mounted

on a minimum pad of 2 oz
copper

Scale 1 : 1 on letter size paper

2.Pulse Test: Pulse Width <
300µs, Duty Cycle < 2.0%

FDZ7064N Rev. D2(W)