Fairchild Semiconductor FDZ5047N Datasheet
FDZ5047N
30V N-Channel Logic Level PowerTrench
ADVANCE INFORMATION
BGA MOSFET
FDZ5047N
December 1999
General Description
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ5047N
minimizes both PCB space and R
. This BGA
DS(ON)
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications resulting in DC/DC power supply
R
DS(ON)
designs with higher overall effic i ency.
Applications
•= DC/DC Converters
•= Solenoid drive
Pin 1
D D D D
D
D
D
D
D
D
D
S
S
S
S
G
S
S
S
S
S
S
S
D
S
S
D
S
S
D
S
S
D
S
S
D
Pin 1
Bottom
Features
•= 22 A, 30 V. R
R
•= Occupies only 27.5 mm
1/5 of the area of a TO-220 package.
•= Ultra-thin package: less than 0.80 mm height when
mounted to PCB.
•= Outstanding thermal t ransfer characteristic s.
•= Ultra-low gate charge x R
•= 175°C maximum junct i on temperature rating.
= 0.0035 Ω @ VGS = 10 V
DS(ON)
= 0.0050 Ω @ VGS = 4.5 V.
DS(ON)
2
of PCB area.
product.
DS(ON)
F5047
G
Top
D
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
±20
V
ID Drain Current – Continuous (Note 1a) 22 A
– Pulsed 75
PD
TJ, T
STG
Total Power Dissipation @ T
= 25°C
A
Operating and Storage Junction Temperature Range -65 to +175
3.3 W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.5
(Note 1a) 45
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
F5047 FDZ5047N TBD TBD TBD
1999 Fairchild Semiconductor Corporation
FDZ5047N Rev B
FDZ5047N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
===∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–B ody Forward Leakage VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Reverse Leakage VGS = –20 V VDS = 0 V 100 nA
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
30 V
22
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
===∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 10V 50 A
D(on)
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 22 A
V
= 4.5 V, ID = 18 A
GS
1 1.5 3 V
–5
3.0
4.2
5.0
3.5
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 5400 pF
iss
C
Output Capac i t ance 1170 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
530 pF
Switching Characteristics (Note 2)
Qg Total Gate Charge 50 70 nC
Qgs Gate–Source Charge 16 nC
Qgd Gate–Drain Charge
V
= 15 V, ID = 1 A,
DS
= 5 V
V
GS
16 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current (Note 1a) 3 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is a function of the junction-to-case (R
θJA
the case thermal reference is defined as the top surface of the package. R
design.
= 45°C/W (steady-state) when mounted on 1 in2 of 2 oz. copper.
(a). R
θJA
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
), case-to-ambient (R
θJC
VGS = 0 V, IS = 22 A (Note 2) 0.95 1.2 V
) and the PC Board (R
θCA
is guaranteed by design while R
θJC
) thermal resistance. For the purpose of determining R
θBA
θCA
and R
are determined by the user's
θBA
θJC
FDZ5047N Rev B
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