Fairchild Semiconductor FDZ2552P Datasheet
ADVANCE INFORMATION
1Q2
FDZ2552P
Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ2552P
November 1999
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ2552P m inimizes both PCB space
and R
. This dual BGA MOSFET embodies a
DS(ON)
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low R
DS(ON)
.
Applications
•= Battery management
•= Load switch
•= Battery protection
D D
Pin 1
S
S
S
G
S
S
G
S S
D D D
D
S
Q2
S
S
Q1
Pin 1
Bottom
Top
Features
•= –6 A, –20 V. R
R
•= Occupies only 0.10 cm
1/3 the area of SO-8.
•= Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
•= Outstanding thermal t ransfer characteristic s:
significantly better than SO-8.
•= Ultra-low Q
x R
g
•= High power and current handling capability.
F2552
= 0.045 Ω @ VGS = –4.5 V
DS(ON)
= 0.075 Ω @ VGS = –2.5 V.
DS(ON)
2
of PCB area.
figure-of-merit.
DS(ON)
S
G
D
G
Q
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
±12
V
ID Drain Current – Continuous (Note 1a) –6 A
– Pulsed -20
PD Power Dissipation (Steady State) (Note 1a) 3.0 W
TJ, T
Operating and Storage Junction Temperature Range –55 to +175
stg
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 8
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
F2552 FDZ2552P TBD TBD TBD
1999 Fairchild Semiconductor Corporation
FDZ2552P Rev. A (w)
FDZ2552P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
===∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage Current,
V
= 0 V, ID = –250 µA
GS
I
= –250 µA, Referenced to
D
25°C
VGS = –12 V, VDS = 0 V –100 nA
–20 V
28
mV/°C
Forward
I
Gate–Body Leakage Current,
GSSR
VGS = 12 V VDS = 0 V 100 nA
Reverse
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
R
Static Drain–Source
DS(on)
On–Resistance
V
= VGS, ID = –250 µA
DS
VGS = –4.5 V, ID = –6 A
V
= –2.5 V, ID = –4.5 A
GS
–0.4 –0.9 –1.5 V
0.036
0.060
0.045
0.075
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.5 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is a function of the junction-to-case (R
θJA
defined the top surface of the package. R
assume single device operation.
(a). R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
= 50°C/W (steady-state) when mounted on 1 in2 of 2 oz. copper.
θJA
), case-to-ambient (R
θJC
is guaranteed by design while R
θJC
VGS = 0 V, IS = –2.5 A (Note 2) –0.77 –1.2 V
) and the PC Board (R
θCA
θCA
and R
) thermal resistance where the case thermal reference is
θBA
are determined by the user's design. Maximum current ratings
θBA
µA
Ω
FDZ2552P Rev. A (w)
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