Fairchild Semiconductor FDS8433A Datasheet

FDS8433A

Single P-Channel 2.5V Specified MOSFET

FDS8433A

October 1998

PRELIMINARY

General Description

This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.

Applications

• Load switch

• DC/DC converter

• Battery protection

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings

S

S

TA = 25°C unless otherwise noted

Features

• -5 A, -20 V. R

R

= 0.045 Ω @ V

DS(on)

= 0.070 Ω @ V

DS(on)

= -4.5 V

GS

= -2.5 V

GS

• Fast switching speed.

• High density cell design for extremely low R

• High power and current handling capability.

5

6
7

8

4

3
2
1

DS(on)

.

Symbol Parameter FDS8433A Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed -50

Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8V

±

-5 A

2.5 W

1.2
1

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case

(Note 1a)
(Note 1)

50
25

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS8433A FDS8433A 13’’ 12mm 2500 units

1998 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDS8433A Rev. B1

FDS8433A

yp

DMOS Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

DSS

BV

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature

Coefficient

J

ID = -250 µA, Referenced to 25°C-25 mV/

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.6 -1 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C4 mV/

VGS = -4.5 V, ID = -5 A
V

= -4.5 V, ID = -5 A, TJ=125°C

GS

V

= -2.5 V, ID = -4.3 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -25 A
Forward Transconductance VDS = -5 V, ID = -5 A 16 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1130 pF
Output Capacitance 480 pF

= -10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.045

0.036

0.085

0.050

0.070

0.047

120 pF

C

°

A

µ

C

°

Ω
Ω
Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 8 16 ns
Turn-On Rise Time 23 37 ns
Turn-Off Delay Time 260 360 ns
Turn-Off Fall Time
Total Gate Charge 20 28 nC
Gate-Source Charge 2.8 nC
Gate-Drain Charge

V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

= -5 V, ID = -5 A,

V

DS

V

= -5 V,

GS

GEN

= 6

Ω

90 125 ns

3.2 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 1 in
pad of 2 oz. copper.

is determined by the user's board design.

θJA

2

b) 105° C/W when

mounted on a 0.04 in
pad of 2 oz. copper.

(Note 2)

2

-0.8 -1.2 V

c) 125° C/W when mounted
on a 0.006 in2 pad
of 2 oz. copper.

FDS8433A Rev. B1

T ypical Characteristics

FDS8433A

50

40

30

20

10

D

- I , DRAIN-SOURCE CURRENT (A)
0

012345

V = -4.5V

GS

-3.5V

-3.0V

-2.5V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.0V

-1.5V

2

1.8

V = -2 .0V

GS

1.6

1.4

1.2

DS( o n)

R , NOR MA LIZ ED

1

DRAIN-SO URCE ON-RESI STAN CE

0.8
0 1020304050

-2.5V

-3.0V

-3.5V

-4.0V

- I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

1.6

I = -5A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-R E SISTA N CE (OHM)

0

12345

-V , GATE TO S OURCE VOLT AG E ( V)

GS

-4.5V

T = 125°C

J

I = -2.5A

D

25° C

Figure 3. On-Resistance Variation

with Temperature.

10

V = -5V

DS

8

6

4

D

- I , DRAIN CURRENT ( A)

2

0

0.4 0.8 1.2 1.6 2

-V , GA TE TO SOURCE V OLTAGE (V)

GS

T = -55 °C

J

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

10

V = 0V

GS

3
1

T =1 25° C

J

25°C

0.1

0.01

S

- I , REVERS E DRAI N CURRENT (A)

0.001
0 0.2 0.4 0.6 0. 8 1 1.2

-V , BODY DI ODE FORWARD VOLT AGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS8433A Rev. B1