Fairchild Semiconductor FDS7766 Datasheet
FDS7766
30V N-Channel PowerTrench
MOSFET
FDS7766
March 2003
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 17 A, 30 V R
R
• High performance trench technology for extremely
low R
• High power and current handling capability
• Fast switching
DS(ON)
= 5 mΩ @ VGS = 10 V
DS(ON)
= 6 mΩ @ VGS = 4.5 V
DS(ON)
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings
TA=25oC unless otherwise noted
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 60
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
17 A
(Note 1a)
2.5
(Note 1b)
(Note 1c)
±16
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corporation
FDS7766 FDS7766 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS7766 Rev E (W)
FDS7766
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Breakdown Voltage Temperature
DSS
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 30 A
D(on)
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 17 A
V
= 4.5 V, ID = 15.5 A
GS
= 10 V, ID = 17 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 17 A 116 S
30 V
24
mV/°C
µA
1 1.5 3 V
–4.3
4.2
4.7
5.7
5.0
6.0
7.2
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 4973 pF
iss
C
Output Capacitance 826 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance
= 15 V, V
V
DS
= 0 V,
GS
f = 1.0 MHz
V
= 15 mV, f = 1.0 MHz
GS
341 pF
1.2
Ω
Switching Characteristics
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 8 16 ns
t
Turn–Off Delay Time 85 136 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 43 69 nC
Qgs Gate–Source Charge 13 nC
Qgd Gate–Drain Charge
(Note 2)
V
= 15 V, ID = 1 A,
DD
= 10 V, R
V
GS
GEN
= 6 Ω
25 40 ns
V
= 15 V, ID = 17 A,
DS
= 5.0 V
V
GS
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
V
= 0 V, IS = 2.5 A
GS
is determined by the user's board design.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
(Note 2)
0.7 1.2 V
2
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7766 Rev E (W)
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