Fairchild Semiconductor FDS7764A Datasheet

FDS7764A

30V N-Channel PowerTrench



MOSFET

FDS7764A

August 2000

PRELIMINARY

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R

in a small package.

DS(ON)

Features

• 15 A, 30 V. R

• High performance trench technology for extremely

low R

capability

High power and current handling

DS(ON)

= 7.5 mΩ @ VGS = 4.5 V

DS(ON)

Applications

• Synchronous Rectifier

• DC/DC converter

D

D

D

D

G

S

SO-8

S

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

5

6

7

8

4

3

2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) 15 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150

±12

1.2

1.0

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

Thermal Resistance, Junction-to-Ambient (Note 1c) 50 (10 sec)

Thermal Resistance, Junction-to-Case (Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS7764A FDS7764A 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corporati on

°C/W

°C/W

°C/W

FDS7764A Rev B1(W)

FDS7764A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS
===∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA

30 V

20

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
===∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source
On–Resistance

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 4.5 V, ID = 15 A

= 10 V, ID = 15.5 A

V

GS

= 4.5 V, ID = 15 A, TJ = 125°C

V

GS

On–State Drain Current VGS = 4.5 V, VDS = 5 V 50 A

Forward Transconductance VDS = 10 V, ID = 15 A 75 S

0.8 1.2 2.0 V

-4

6.0

mV/°C

7.5

5.3

9.0

13.0

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 5070 pF

Output Capacitance 550 pF

Reverse Transfer Capacitance

V

= 15 V, V

DS

f = 1.0 MHz

GS

= 0 V,

230 pF

Switching Characteristics (Note 2)

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 17 25 ns

Turn–On Rise Time 18 25 ns

= 10 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 69 100 ns

Turn–Off Fall Time

Total Gate Charge 33 46 nC

Gate–Source Charge 7.5 nC

V

= 15 V, ID = 15 A,

DS

V

= 4.5 V

GS

Gate–Drain Charge

29 42 ns

6.8 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

θCA

V

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

GS

is determined by the user's board design.

µA

mΩ

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

FDS7764A Rev B1(W)

Typical Characteristics

)

E

E

)

)

FDS7764A

50

VGS = 4.5V

40

30

20

, DRAIN CURRENT (A

D

I

10

3.5V

0

00.511.5

3.0V

2.5V

2.0V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1.5

1.3

, NORMALIZED

1.1

DS(ON)

R

DRAIN-SOURCE ON-RESISTANC

0.9
0 102030405060

VGS = 2.5V

3.0V

3.5V

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = 15A

= 10V

V

1.6

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.025

0.02

0.015

0.01

, ON-RESISTANCE (OHM)

0.005

DS(ON)

R

0

0246810

V

GS

TA = 125oC

TA = 25oC

, GATE TO SOURCE VOLTAGE (V)

ID = 6 A

Figure 3. On-Resistance Variation with

Temperature.

60

VDS = 5V

45

30

, DRAIN CURRENT (A

15

D

I

0

0.511.522.53

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A

S

I

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

V

, BODY DIODE FO RWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7764A Rev B1(W)