Fairchild Semiconductor FDS7760A Datasheet

FDS7760A

N-Channel Logic Level PowerTrench® MOSFET

FDS7760A

February 2000

PRELIMINARY

General Description

This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.

These devices are well suited for low voltage and

Features

15 A, 30 V. R

•

Low gate charge (37nC typical)

•

Fast switching speed.

•

= 5.5 mΩ @ VGS = 10 V

DS(ON)

R

= 8 mΩ @ VGS = 4.5 V.

DS(ON)

battery powered applications where low in-line power
loss and fast switching are required.

Applications

DC/DC converter

•

Load switch

•

Motor drives

•

D

D

D

D

S

SO-8

S

S

Absolute Maximum Ratings

G

TA=25oC unless otherwise noted

High performance trench technology for extremely

•

DS(ON)

.

5
6
7
8

4
3
2
1

low R

High power and current handling capability.

•

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous

(Note 1a)

20

±

15 A

– Pulsed 60

Power Dissipation for Single Operation

(Note 1a)
(Note 1b)

(Note 1c)

2.5

1.2
1

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1c)

(Note 1)

50

50 (10 sec)

30

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS7760A FDS7760A 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

C/W

°

FDS7760A Rev. B (W)

FDS7760A

DMOS Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

V

= 0 V, ID = 250 µA

GS

I

= 250 µA, Referenced to 25°C

D

30 V

24

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = 250 µA

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 15 A

= 10 V, ID = 15 A, TJ = 125°C

V

GS

= 4.5 V, ID = 13 A

V

GS

11.63 V

-5

4.5
7
6

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 15 A 65 S

5.5
10

mV/°C

A

µ

mV/°C

m

Ω

8

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Input Capacitance 3514 pF
Output Capacitance 1123 pF
Reverse Transfer Capacitance

(Note 2)

Turn–On Delay Time 13 20 ns
Turn–On Rise Time 12 19 ns

= 15 V, V

V

DS

f = 1.0 MHz

V

= 15 V, ID = 1 A,

DD

= 10 V, R

V

GS

GS

GEN

= 0 V,

= 6

307 pF

Ω

Turn–Off Delay Time 78 125 ns
Turn–Off Fall Time
Total Gate Charge 37 55 nC
Gate–Source Charge 10 nC

V

= 15 V, ID = 15 A,

DS

V

= 5 V

GS

Gate–Drain Charge

32 51 ns

12 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

VGS = 0 V, IS = 2.1 A

(Note 2)

0.7 1.2 V

Voltage

is guaranteed by design while R

JC

θ

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

is determined by the user's board design.

CA

θ

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

FDS7760A Rev. B (W)

Typical Characteristics

FDS7760A

60

VGS = 10V

50

5.0

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

00.511.5

4.0V

3.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

3.0V

2.5V

2

1.8

1.6

VGS = 4.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 102030405060

4.5V

5.0V

6.0V

, DRAIN CURRENT (A)

I

D

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = 9A

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.02

0.015

0.01

, ON-RESISTANCE (OHM)

0.005

DS(ON)

R

0

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

10V

ID = 7.5 A

Figure 3. On-Resistance Variation with

Temperature.

80

VDS = 5V

70

60

50

40

30

, DRAIN CURRENT (A)

20

D

I

10

0

11.522.533.54

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7760A Rev. B (W)