Fairchild Semiconductor FDS7064A Datasheet
FDS7064A
FDS7064A
30V N-Channel PowerTrench MOSFET
May 2000
ADVANCE INFORMATION
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS( ON)
Features
• 19 A, 30 V R
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
= 6.5 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• Synchronous rectifier
• DC/DC converter
D
S
D
S
S
D
S
D
Bottomless
SO-8
Pin 1
SO-8
S
S
S
Absolute Maximum Ratings T
D
G
G
S
S
S
=25oC unless otherwise noted
A
• Fast switching
• Bottomless SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-sid e
Drain Contac t
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 19 A
– Pulsed 60
Power Dissipation for Single Operation (Note 1a) 3.9
Operating and Storage Junction Temperature Range –55 to +175
±12
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 38
Thermal Resistance, Junction-to-Case 1
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS7064A FDS7064A 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS7064A Rev A1(W)
Electrical Characteristics T
FDS7064A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 20 mV/°C
30 V
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 19 A
VGS = 10 V, ID = 21 A
0.8 1.2 2 V
-4 mV/°C
On–State Drain Current VGS = 4.5 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 19 A 75 S
6.5
5.5
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 5070 pF
Output Capacitance 550 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
230 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 17 25 ns
Turn–On Rise Time 18 25 ns
Turn–Off Delay Time 69 100 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 33 46 nC
Gate–Source Charge 7.5 nC
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 19 A,
VGS = 4.5 V
29 42 ns
6.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
a) 38°C/W when mounted on a 1in2 pad of 2 oz copper
Maximum Continuous Drain–Source Diode Forward Current 3.2 A
Drain–Source Diode Forward
Voltage
is the junction-to-ambient thermal resistance. R
θJA
VGS = 0 V, IS = 3.2 A (Note 2) 1.2 V
depends on the user's board design.
µA
FDS7064A Rev A1(W)
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