Fairchild Semiconductor FDS7060N7 Datasheet
May 2003
FDS7060N7
30V N-Channel PowerTrench MOSFET
FDS7060N7
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• Synchronous rectifier
Features
• 19 A, 30 V. R
R
• High performance trench technology for extremely
DS(ON)
low R
• High power and current handling capability
• Fast switching, low gate charge (35nC typical)
= 5 mΩ @ VGS = 10 V
DS(ON)
= 7 mΩ @ VGS = 4.5 V
DS(ON)
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
Drain Contact
5
6
7
8
4
3
2
1
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
± 20
ID Drain Current – Continuous (Note 1a) 19 A
– Pulsed 60
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a) 3.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 40
(Note 1) 0.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS7060N7 FDS7060N7 13’’ 12mm 2500 units
2002 Fairchild Semiconductor Corpora tion
FDS7060N7 Rev C1 (W)
°C/W
°C/W
FDS7060N7
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD=30V, ID = 19A 360 mJ
IAS Drain-Source Avalanche Current 19 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
30 V
23
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 60 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 19 A
= 4.5V, ID = 16 A
V
GS
= 10 V, ID = 19 A,TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 19 A 78 S
1 1.5 3 V
–4.7
4.0
5.8
6
5
7
6.5
mV/°C
mΩ
Dynamic Characteristics
= 15 V, V
V
C
Input Capacitance 3274 pF
iss
C
Output Capacitance 721 pF
oss
C
Reverse Transfer Capacitance
rss
DS
f = 1.0 MHz
= 0 V,
GS
283 pF
Switching Characteristics (Note 2)
= 15 V, ID = 1 A,
V
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 8 16 ns
t
Turn–Off Delay Time 60 96 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 35 56 nC
Qgs Gate–Source Charge 10 nC
Qgd Gate–Drain Charge
DD
= 5 V, R
V
GS
= 15 V, ID = 19 A,
V
DS
= 5 V
V
GS
GEN
= 6 Ω
30 48 ns
12 nC
FDS7060N7 Rev C1 (W)
FDS7060N7
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
a) 40°C/W when
mounted on a 1in
of 2 oz copper
= 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V
V
GS
is determined by the user's board design.
2
pad
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
FDS7060N7 Rev C1 (W)
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