Fairchild Semiconductor FDS6990A Datasheet
June 1999
FDS6990A
Dual N-Channel Logic Level PowerTrench
ΤΜΤΜ
MOSFET
General Description Features
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
SOT-23 SuperSOTTM-8
D2
D2
D1
D1
FDS
6990A
G2
S2
G1
1
SO-8
pin
S1
7.5 A, 30 V. R
R
= 0.018 Ω @ VGS = 10 V
DS(ON)
= 0.023 Ω @ VGS = 4.5 V .
DS(ON)
Fast switching speed.
Low gate charge (typical 18nC).
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SO-8 SOT-223SuperSOTTM-6
5
6
7
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ,T
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 7.5 A
- Pulsed 20
Power Dissipation for Single Operation (Note 1a) 2 W
(Note 1b) 1.6
(Note 1c) 0.9
Operating and Storage Temperature Range -55 to 150 °C
STG
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
= 25oC unless otherwise noted
A
©1999 Fairchild Semiconductor
FDS6990A Rev.C1
Electrical Characteristics ( T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆ BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
/∆ T
J
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 0 V, I D = 250 µA
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
TJ = 55°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, V
DS
= 0 V
30 V
20
mV /oC
1 µA
10 µA
100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V
∆ V
R
I
D(ON)
g
FS
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
/∆ T
J
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 7.5 A
TJ =125°C
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 7.5 A
1 1.5 3 V
-4
mV /oC
0.015 0.018
0.022 0.031
0.018 0.023
20 A
24 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 365 pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 170 pF
1650 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
t
r
t
D(off)
t
f
Q
Q
Q
Turn - On Delay Time
Turn - On Rise Time
V
= 15 V, ID = 1 A
DS
VGS = 10 V , R
GEN
= 6 Ω
Turn - Off Delay Time 25 40 ns
Turn - Off Fall Time 11 20 ns
g
gs
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge 6.7 nC
VDS = 15 V, ID = 7.5 A,
V
= 5 V
GS
11 20 ns
9 18 ns
18 25 nC
5.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
θJA
guaranteed by design while R
Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Drain-Source Diode Forward Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
is determined by the user's board design.
θCA
VGS = 0 V, IS = 1.3 A
(Note 2)
1.2 V
θJC
Ω
is
a. 78OC/W on a 0.5 in
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2
b. 125OC/W on a 0.02 in
pad of 2oz copper.
2
c. 135OC/W on a minimum
pad.
FDS6990A Rev.C1
Typical Electrical Characteristics
40
V =10VGS
6.0V 3.5V
4.5V
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 0.5 1 1.5 2 2.5 3
4.0V
3.0V
2.5V
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
D
I = 7.5A
V = 10VGS
1.4
1.2
1
DS(ON)
0.8
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
3
2.5
2
V = 3.0V
GS
1.5
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40
3.5 V
4.5 V
I , DRAIN CURRENT (A)
D
6.0 V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
0.08
0.06
0.04
0.02
DS(ON)
R , ON-RESISTANCE (OHM)
0
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
125°C
25°C
10V
I = 3.8A
D
Figure 3. On-Resistance Variation with
Temperature.
40
DS
V =5.0V
30
20
10
D
I , DRAIN CURRENT (A)
0
1 2 3 4 5
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
V = 0V
GS
10
T = 125°C
1
0.1
0.01
S
I , REVERSE DRAIN CURRENT (A)
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
J
25°C
-55°C
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6990A Rev.C1
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