Fairchild Semiconductor FDS6982 Datasheet

FDS6982

(

)

Dual N-Channel, Notebook Power Supply MOSFET

General Description

This part is designed to replace two single SO-8 MOSFET s in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20mΩ

at VGS = 4.5V).

Applications

• Battery powered synchronous DC:DC converters.

• Embedded DC:DC conversion.

Features

• Q2: 8.6A, 30V. R

R

• Q1: 6.3A, 30V. R

R

• Fast switching speed.

• Low gate charge (Q1 typical = 8.5nC).

• High performance trench technology for extremely

low R

DS(ON)

.

= 0.015 Ω @ V

DS(on)

= 0.020 Ω @ V

DS(on)

= 0.028 Ω @ V

DS(on)

= 0.035 Ω @ V

DS(on)

June 1999

= 10V

GS

= 4.5V

GS

= 10V

GS

= 4.5V

GS

FDS6982

D2

D1

G2

S2

SO-8

G1

S1

Absolute Maximum Ratings

Symbol Parameter

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 30 30 V Gate-Source Voltage Drain Current - Continuous

- Pulsed 30 20 Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

TA = 25°C unless otherwise noted

(Note 1a)

Note 1a

(Note 1b) (Note 1c)

(Note 1a) (Note 1)

5

Q1

6

7

Q2

8

Q2

20

±

8.6 6.3 A

1.6 1

0.9

78 40

4

3 2 1

Q1

20 V

±

Units

° °

C

°

C/W C/W

Package Marking and Ordering Information

Device M a rk in g Device Ree l S iz e Tape W id th Quantity

FDS6982 FDS6982 13” 12mm 2500 units

1999 Fairchild Semiconductor Corporation

FDS6982, Rev. C

FDS6982

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions TypeMin TypMax Units

Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage

Breakdown Voltage

DSS

Temperature Coefficient

J

Zero Gate Voltage Drain

VGS = 0 V, ID = 250 µAQ2

Q13030

ID = 250 µA, Referenced to 25°CQ2Q127

26

VDS = 24 V, VGS = 0 V All 1

Current Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA

Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µAQ2

Q111

Gate Threshold Voltage Temperature Coefficient

J

Static Drain-Source On-Resistance

ID = 250 µA, Referenced to 25°CQ2Q1-5

VGS = 10 V, ID = 8.6 A V

= 10 V, ID = 8.6 A, TJ = 125°C

GS

= 4.5 V, ID = 7.5 A

V

GS

V

= 10 V, ID = 6.3 A

GS

V

= 10 V, ID = 6.3 A, TJ = 125°C

GS

= 4.5 V, ID = 5.6 A

V

GS

Q2

Q1

2.2

1.633

-4

0.012

0.018

0.016

0.021

0.038

0.028

On-State Drain Current VGS = 10 V, VDS = 5 V Q2Q130

20

Forward Transconductance VDS = 5 V, ID = 8.6 A

V

= 5 V, ID = 6.3 A

DS

Q2 Q1

50 40

0.015

0.024

0.020

0.028

0.047

0.035

V

mV/°C

A

µ

V

mV/°C

Ω

A

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Q2

Output Capacitance Q2

Reverse Transfer Capacitance

= 10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Q1

Q1 Q2 Q1

2085

760 420 160 160

70

pF

FDS6982, Rev. C

FDS6982

yp

Electrical Characteristics

(continued)

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min T

(Note 2)

Switching Characteristics

t

d(on)

r

Turn-On Delay Time Q2

Turn-On Rise Time Q2

V

= 15 V, ID = 1 A,

DD

V

= 10V, R

GS

GEN

= 6

Ω

Q1

t

d(off)

Turn-Off Delay Time Q2

Q1

t

f

Turn-Off Fall Time

Q2 Q1

Q

g

Q

gs

Q

gd

Total Gate Charge Q2

Q2

= 15 V, ID = 8.6 A, VGS = 5 V

V

DS

Q1

Gate-Source Charge Q2

Gate-Drain Charge

Q1 V

= 15 V, ID = 6.3 A,VGS = 5 V

DS

Q1 Q2 Q1

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain-Source Diode Forward Current Q2

Q1 Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = 1.3 A

is determined by the user's board design.

θJA

(Note 2) (Note 2)

Q2

Q1

Max Units

15102718ns

11142025ns

36215834ns

1872914ns

18.5

8.52612

7.3

2.4

6.2

3.1

1.3

0.72

0.74

1.2

nC

A

V

a) 78° C/W when

mounted on a 0.5 in pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

2

b) 125° C/W when

mounted on a 0.02 in pad of 2 oz. copper.

2

c) 135° C/W when

mounted on a 0.003 in pad of 2 oz. copper.

2

FDS6982, Rev. C

Typical Characteristics: Q2

FDS6982

50

VGS = 10V

5.0V

40

30

20

10

0

01234

4.5V

4.0V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

3.5V

3.0V

Figure 1. On-Region Characteristics.

1.6 ID = 8.6A

V

= 10V

GS

1.4

1.2

1

0.8

2

1.8

VGS = 4.0V

1.6

1.4

1.2

1

0.8 0 1020304050

4.5V

5.0V

, DRAIN CURRENT (A)

I

D

6.0V

7.0V 10V

Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

0.04

0.03

0.02

0.01

TA = 125oC

TA = 25oC

ID = 4.5A

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation

with Temperature.

50

VDS = 5V

40

30

20

10

0

123456

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 5. Transfer Characteristics.

0

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001

TA = 125oC

25oC

-55oC

0 0.4 0.8 1.2 1.6

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS6982, Rev. C