Fairchild Semiconductor FDS6930A Datasheet

October 1998

FDS6930A
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.

5.5 A, 30 V. R
R

Fast switching speed.
Low gate charge (typical 5 nC).

High performance trench technology for extremely low
R

.

DS(ON)

High power and current handling capability.

= 0.040 Ω @ VGS = 10 V

DS(ON)

= 0.055 Ω @ VGS = 4.5 V.

DS(ON)

SOT-23

D1

D2

D1

SuperSOTTM-6

D2

FDS

SuperSOTTM-8

SO-8 SOT-223

5

6

SOIC-16

4

3

6930A

7

8

SO-8

pin 1

Absolute Maximum Ratings T

G2

S2

G1

S1

= 25oC unless otherwise noted

A

Symbol Parameter FDS6930A Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous (Note 1a) 5.5 A

- Pulsed 20

P

D

Power Dissipation for Dual Operation (Note 1) 2 W
Power Dissipation for Single Operation (Note 1a) 1.6 W
(Note 1b) 1
(Note 1c) 0.9

TJ,T

Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

2

1

© 1998 Fairchild Semiconductor Corporation

FDS6930A Rev.D

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V

GS

= 0 V

20

1 µA

TJ = 55°C
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, V

DS

= 0 V

mV/ oC

10 µA

-100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 5.5 A

-4

0.032 0.04

mV/ oC

TJ =125°C 0.048 0.068

0.044 0.055

12 S

I
g

D(ON)

FS

VGS = 4.5 V, ID = 4.8 A
On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance

VDS = 15 V, ID = 5.5 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 115 pF

f = 1.0 MHz

460 pF

Reverse Transfer Capacitance 45 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time

V

= 15 V, ID = 1 A

DS

VGS = 10 V , R

GEN

= 6 Ω

Turn - Off Delay Time 17 28 ns
Turn - Off Fall Time 13 24 ns

g

gs

gd

Total Gate Charge VDS = 5 V, ID = 5.5 A, 5 7 nC
Gate-Source Charge

V

= 5 V

GS

Gate-Drain Charge 0.9 nC

5 11 ns
8 17 ns

2 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

VGS = 0 V, IS = 1.3 A

(Note 2)

1.2 V

is guaranteed by

JC

θ

Ω

a. 78OC/W on a 0.5 in

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

pad of 2oz copper.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

FDS6930A Rev.D

Typical Electrical Characteristics

30

V =10V

24

6.0V

GS

5.0V

4.5V

4.0V

18

12

6

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

3.5V

3.0V

DS

Figure 1. On-Region Characteristics.

1.6

I = 5.5A

D

V = 10V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

4

V = 3.0V

GS

3

3.5 V

2

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0

0 6 12 18 24 30

4.0 V

4.5 V

I , DRAIN CURRENT (A)

D

5.5 V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.15

0.1

125°C

0.05

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

25°C

10V

I = 2.5A

D

Figure 3. On-Resistance Variation with

Temperature.

15

V =5.0V

DS

12

9

6

D

I , DRAIN CURRENT (A)

3

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

J

25°C

125°C

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

V = 0V

GS

T = 125°C

1

J

25°C

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6930A Rev.D