Fairchild Semiconductor FDS6912 Datasheet

January 2000

FDS6912

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6912

General Description

These N-Channel Logic Level MOSFETs have been
designed specifically to improve the overall effici ency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive

Features

6 A, 30 V. R

•

R

= 0.042 Ω @ VGS = 4.5 V.

DS(ON)

Optimized for use in switching DC/DC converters

•

with PWM controllers

Very fast switching.

•

Low gate charge

•

= 0.028 Ω @ VGS = 10 V

DS(ON)

(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

D1

D1

D2

D2

G1

S2

S1

G2

SO-8

Absolute Maximum Ratings

TA=25oC unless otherwise noted

5

Q1

6
7

Q2

8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous

(Note 1a)

20

±

6A

– Pulsed 20
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)

(Note 1c)

1.6
1

0.9

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

78
40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6912 FDS6912 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

FDS6912 Rev E (W)

FDS6912

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

30 V

20

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

T

= 55°C

J

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = 250 µA

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 6 A
T

= 125°C

J

123 V

–5

0.024

0.034

VGS = 4.5 V, ID = 4.9 A 0.035 0.042
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance VDS = 10 V, ID = 6 A 20 S

1

10

0.028

0.048

mV/°C

A

µ

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 740 pF
Output Capacitance 170 pF
Reverse Transfer Capacitance

= 15 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

75 pF

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 8 16 ns
Turn–On Rise Time 13 24 ns
Turn–Off Delay Time 18 29 ns
Turn–Off Fall Time
Total Gate Charge 7 10 nC
Gate–Source Charge 3.8 nC
Gate–Drain Charge

(Note 2)

V

= 15 V, ID = 1 A,

DD

= 10 V, R

V

GS

= 10 V, ID = 6 A,

V

DS

= 5 V

V

GS

GEN

= 6

Ω

816ns

2.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

2.

Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A

(Note 2)

0.75 1.2 V

Voltage

is guaranteed by design while R

JC

θ

a) 78°/W when

mounted on a 0.5in
pad of 2 oz copper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is determined by the user's board design.

CA

θ

2

b) 125°/W when

mounted on a 0.02
in2 pad of 2 oz
copper

c) 135°/W when mounted on a

minimum mounting pad.

FDS6912 Rev E (W)

Typical Characteristics

FDS6912

30

24

18

V = 10 V

GS

6.0V

5.0V

4.5V

4.0V

12

D

I , DRAIN- S OUR CE CURREN T (A)

6

3.5V

3.0V

0

0112233

V , D RA I N-S OUR CE VOLTAGE (V)

DS

2

1.8

1.6

1.4

1.2

VGS = 4.0V

4.5V

5.0V

6.0V

7.0V

1

0.8
0 1020304050

, DRAIN CURRENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.5

I = 6.3A

D

1.4

V =10V

GS

1.3

1.2

1.1

1.0

0.9

DS(ON)

R ,NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

8

7

)

6



5

4

DS(ON)

R ,(

3

DRAIN-SOURCE ON-RESISTANCE

2

1

246810

V ,GATE-SOURCE VOLTAGE (V)

GS

T = 125 C

A

o

25 C

10V

I = 3.0A

D

o

Figure 3. On-Resistance Variation

withTemperature.

20

V = 5V

DS

15

10

D

5

I , DRAIN CURRENT (A)

0

12345

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001
0 0.4 0.8 1.2 1.6

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6912 Rev E (W)