Fairchild Semiconductor FDS6890A Datasheet

FDS6890A

Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDS6890A

November 1999

General Description

These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.

Features

•

7.5 A, 20 V. R
R

DS(ON)

DS(ON

= 0.018 Ω @ V
= 0.022 Ω @ V

)

• Low gate charge (23nC typical).

= 4.5 V

GS

= 2.5 V.

GS

• Fast switching speed.

Applications

• DC/DC converter

• Motor drives

• High performance trench technology for extremely

low R

DS(ON

.

)

• High power and current handling capability.

D2

D2

D1

D1

S2

G1

1

pin

SO-8

S1

Absolute Maximum Ratings

G2

T

=25oC unless otherwise noted

A

5
6

7
8

4

3
2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 20
Power Dissipation for Dual Operation 2.0
Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)

(Note 1b)
(Note 1c)

±

8

7.5 A

1.6

1.0

0.9

V

W

°

C

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Therm al R es istan c e, J un ctio n-to-C as e

(Note 1a)
(Note 1)

78
40
90

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS6890A FDS6890A 13 12mm 2500 units

1999 Fairchild Semiconductor Corporation

°

C/W

°

C/W

FDS6890A Rev. C

FDS6890A

Electrical Characteristics T

Symbol
Off Characteristics

BV

∆
∆

I

DSS

I

GSSF

DSS

BV

T

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

Gate-Body Leakage Current,

Parameter

= 25 C unless otherwise noted

A

Test Conditions

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

Min

Typ Max Units

20 V

14

VGS = 8 V, VDS = 0 V 100 nA

mV/°C

µ

A

Forward

I

Gate-Body Leakage Current,

GSSR

On Characteristics

V

GS(th)

∆

GS(th)

V

∆

T

R

DS(on)

Reverse

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain-Source

On-Resistance

I

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A

D(on)

VGS = -8 V, VDS = 0 V -100 nA

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to 25°C

I

D

0.5 0.8 1.5 V

-3.5

mV/°C

VGS = 4.5 V, ID =7.5 A

= 4.5 V, ID =7.5 A, TJ =125°C

V

GS

= 2.5 V, ID =6.5 A

V

GS

0.013

0.021

0.016

0.018

0.034

0.022

Ω

gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 35 S

Dynamic Characteristics

C

Input Capacitance 2130 pF

iss

C

Output Capacitance 545 pF

oss

C

Revers e Transfer Capacitance

rss

Switching Characteristics

t

Turn-On Delay Time 13 24 ns

d(on)

tr Turn-On Rise Time 26 42 ns
t

Turn-Off Del ay Ti me 65 90 ns

d(off)

tf Turn-Off Fall Time
Qg Total Gate Charge 23 32 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

= 10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

270 pF

(Note 2)

V

= 10 V, ID = 1 A,

DD

= 4.5 V, R

V

GS

GEN

= 6 Ω

23 37 ns

= 10 V, ID = 7.5 A,

V

DS

= 4.5 V,

V

GS

4.4 nC

IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A
VSD Drain-Sourc e Di ode Forward

VGS = 0 V, IS = 1.3 A

(Note 2)

0.65 1.2 V

Voltage

Notes:

1. R

surface of the drain pins. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

θJA

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

Scale 1 : 1 on letter size paper

a) 78° C/W when

mounted on a 0.5 in
pad of 2 oz. copper.

2

b) 125° C/W when

mounted on a 0.02 in
pad of 2 oz. copper.

2

c) 135° C/W when

mounted on a minimum pad.

FDS6890A Rev. C

T ypical Characteristics (continued)

FDS6890A

30

VGS=4.5V

2.5V

24

18

12

6

, DRAIN-SOURCE CURRENT (A)

D

I

0

00.511.522.53

2.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

1.8

VGS =1.8V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

2.0V

2.5V

3.0V

3.5V

DRAIN-SOURCE ON-RESISTANCE

0.8
0 5 10 15 20 25 30

I

, DRAIN CURRENT (A)

D

4.5

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation with

Drain Current and Gate V oltage.

1.8
ID = 7.5A

1.6

V

= 4.5V

GS

1.4

1.2

1

, NORMALIZED

DS(ON)

0.8

R

0.6

DRAIN-SOURCE ON-RES ISTANCE

0.4

-50-25 0 255075100125150

, JUNCTION TEMPERATURE (oC)

T

J

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

0

12345

, GATE TO SOURCE VOLT AGE (V)

V

GS

TA = 125oC

TA = 25oC

ID =3.8A

Figure 3. On-Resistance Variation

withT emperature.

30

VDS = 5V

24

18

12

, DRAIN CURRENT (A)

D

I

6

0

0.5 1 1.5 2 2.5 3

V

TA = -55oC

125oC

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source V oltage.

100

VGS=0

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TJ=125oC

25oC

-55oC

V

, BODY DIODE VOLTAGE (V)

SD

Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FDS6890A Rev. C