Fairchild Semiconductor FDS6694 Datasheet
FDS6694
FDS6694
30V N-Channel Fast Switching PowerTrench MOSFET
December 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 12 A, 30 V. R
R
• Low gate charge (13 nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability.
DS(ON)
5
6
7
8
= 11 mΩ @ VGS = 10 V
DS(ON)
= 13.5 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage ±16 V
GSS
ID Drain Current – Continuous (Note 1a) 12 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175 °C
1.4
1.2
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation FDS6694 Rev D(W)
FDS6694 FDS6694 13’’ 12mm 2500 units
FDS6694
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C 22 mV/°C
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10.5 A
VGS= 10 V, ID = 12 A, TJ=125°C
–5 mV/°C
9.1
11
11.1
12.2
13.5
m Ω
15
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 5 V, ID = 12 A 50 S
Dynamic Characteristics
C
Input Capacitance 1293 pF
iss
C
Output Capacitance 342 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
136 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 6 12 ns
t
Turn–Off Delay Time 28 45 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 13 19 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = –1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 12 A,
VGS = 5 V
10 20 ns
4.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
FDS6694 Rev D(W)
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