Fairchild Semiconductor FDS6692 Datasheet
G
FDS6692
FDS6692
30V N-Channel PowerTrench MOSFET
September 2003
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
Features
• 12 A, 30 V. R
R
• High performance trench technology for extremely
low R
• Low gate charge (18 nC typical)
• High power and current handling capability
DS(ON)
5
6
7
8
= 12 mΩ @ VGS = 10 V.
DS(ON)
= 14.5 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 12 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +175
± 16
1.2
1.0
°C
V
W
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corporation
FDS6692 FDS6692 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS6692 Rev D (W)
FDS6692
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
26
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
gFS Forward Transconductance VDS = 5 V, ID = 12 A 50 S
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 12 A, TJ = 125°C
1 1.6 3 V
–5
9.5
11.5
14
mV/°C
12
14.5
Dynamic Characteristics
C
Input Capacitance 2164 pF
iss
C
Output Capacitance 357 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
138 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 35 56 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 18 25 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 12 A,
VGS = 5 V
10 20 ns
5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
µA
mΩ
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
FDS6692 Rev D (W)
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