Fairchild Semiconductor FDS6690S Datasheet

FDS6690S

G

FDS6690S

30V N-Channel PowerTrench SyncFET

May 2000

PRELIMINARY

™

General Description

The FDS6690S is designed to replace a single SO- 8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R

and low gate charge. The FDS6690S includes

DS(ON)

Features

• 10 A, 30 V. R

• Includes SyncFET Schottky diode

= 0.016 Ω @ VGS = 10 V

DS(ON)

R

= 0.024 Ω @ VGS = 4.5 V

DS(ON)

an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of

• Low gate charge (11 nC typical)

the FDS6690S as the low-side switch in a synchronous
rectifier is close to the performance of the FDS6690A in
parallel with a Schottky diode.

Applications

• High performance trench technology for extremely low
R

DS(ON)

• High power and current handling capability

• DC/DC converter

• Motor drives

D

D

D

D

S

S

SO-8

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

5
6
7
8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current – Continuous (Note 1a) 10 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

(Note 1c)

1.2
1

Operating and Storage Junction Temperature Range -55 to +150 °C

W

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6690S FDS6690S 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corporation

FDS6690S Rev B(W)

Electrical Characteristics T

FDS6690S

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
Breakdown Voltage Temperature

Coefficient

J

ID = 1 mA, Referenced to 25°C

23

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 mA
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS( th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 2.4 3 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

ID = 1 mA, Referenced to 25°C

VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8.5 A
VGS=10 V, ID =10 A, TJ=125°C

-6 mV/°C

13
20
19

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, ID = 10 A 26 S

16
24
26

m Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1233 pF
Output Capacitance 344 pF
Reverse Transfer Capacitance

VDS = 15 V, V
f = 1.0 MHz

GS

= 0 V,

106 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn–On Delay Time 8 16 ns
Turn–On Rise Time 5 10 ns

VDS = 15 V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 25 40 ns
Turn–Off Fall Time
Total Gate Charge 11 18 nC
Gate–Source Charge 5 nC

VDS = 15 V, ID = 10 A,
VGS = 5 V

Gate–Drain Charge

11 20 ns

4 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 3.5 A
Drain–Source Diode Forward

Voltage
Diode Reverse Recovery Time 17 nS

Diode Reverse Recovery Charge

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 3.5 A (Note 2) 0.5 0.7 V
IF = 10A

diF/dt = 300 A/µs (Note 3)

12.5 nC

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

FDS6680S Rev B (W)

Typical Characteristics

4.5V

4.0V

6.0V

5.0V

4.5V

= 10V

C

C

TA = 125oC

FDS6690S

50

VGS = 10V

40

30

20

10

0

0 1 2 3

6.0V

5.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

3.5V

2.6

VGS = 4.0V

2.2

1.8

1.4

1

0.6
0 10 20 30 40 50

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.9
ID = 10A

VGS

1.6

1.3

1

0.7

0.4

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.06

0.05

0.04

0.03

0.02

0.01

0

2 4 6 8 10

TA = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125

o

ID = 5A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = 5V

40

30

20

10

0

1.5 2.5 3.5 4.5 5.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

o

o

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001
0 0.2 0.4 0.6 0.8

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6680S Rev B (W)