Fairchild Semiconductor FDS6690A Datasheet

April 1999

FDS6690A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

This N-Channel Logic Level MOSFET is
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.

11 A, 30 V. R

Fast switching speed.
Low gate charge.
High performance trench technology for

extremely low R
High power and current handling capability.

= 0.0125 Ω @ VGS = 10 V,

DS(ON)

R

= 0.017 Ω @ VGS = 4.5 V.

DS(ON)

.

DS(ON)

SOT-23

SuperSOTTM-8

D

D

D

D

FDS

6690A

SO-8 SOT-223SuperSOTTM-6

5

6

7

SOIC-16

4

3
2

G

SO-8

1

S

pin

S

8

1

S

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 11 A

- Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

= 25oC unless other wise noted

A

© 1998 Fairchild Semiconductor Corporation

FDS6690A Rev.C1

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 20 mV / oC

/∆T

J

Zero Gate Voltage Drain Current VDS = 24 V, V

= 0 V 1 µA

GS

TJ = 55°C 10 µA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4 mV /oC

/∆T

J

Static Drain-Source On-Resistance VGS = 10 V, I D = 11 A 0.01 0.0125

TJ =125°C 0.015 0.022

VGS = 4.5 V, I D = 10 A 0.013 0.017

I

D(ON)

g

FS

On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, I D= 11 A 45 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 350 pF

f = 1.0 MHz

1600 pF

Reverse Transfer Capacitance 140 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDS= 15 V, I D= 1 A 10 18 ns
Turn - On Rise Time

VGS = 10 V , R

GEN

= 6 Ω

12 22 ns

Turn - Off Delay Time 35 56 ns
Turn - Off Fall Time 10 18 ns
Total Gate Charge VDS = 15 V, I D = 11A, 17 23 nC
Gate-Source Charge VGS= 5 V 5 nC
Gate-Drain Charge 6 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

guaranteed by design while R

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) 0.73 1.2 V

Ω

is

JC

θ

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 105OC/W on a 0.04 in

pad of 2oz copper.

2

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

FDS6690A Rev.C1

Typical Electrical Characteristics

50

V =10V

GS

6.0V

40

4.5V

30

4.0V

3.5V

3.0V

20

10

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

2.5V

Figure 1. On-Region Characteristics.

1.6

I = 11A

D

V = 10V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3

2.5

2

1.5

DS(ON)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

1

0 10 20 30 40 50

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.05

0.04

0.03

0.02

0.01

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V = 3.0V

GS

3.5 V

4.0 V

I , DRAIN CURRENT (A)

D

T = 125°C

A

V , GATE TO SOURCE VOLTAGE (V)

GS

4.5 V

T = 25°C

A

5.5 V

7.0 V
10V

I = 5.5A

D

Figure 3. On-Resistance Variation with

Temperature.

40

V =5.0V

DS

30

T = -55°C

J

25°C

125°C

Figure 4. On Resistance Variation with

Gate-to-Source Voltage.

40

V = 0V

GS

10

T = 125°C

1

J

25°C

20

10

D

I , DRAIN CURRENT (A)

0

1 2 3 4

V , GATE TO SOURCE VOLTAGE (V)

GS

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6690A Rev.C1