Fairchild Semiconductor FDS6682 Datasheet
FDS6682
30V N-Channel PowerTrench
MOSFET
FDS6682
December 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• DC/DC converter
Features
• 14 A, 30 V. R
R
• Low gate charge (22 nC typical)
• High performance trench technology for extremely
DS(ON)
low R
• High power and current handling capability
= 7.5 mΩ @ VGS = 10 V
DS(ON)
= 9.0 mΩ @ VGS = 4.5 V
DS(ON)
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 14 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
±16
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Sem iconductor Corporation
FDS6682 FDS6682 13’’ 12mm 2500 units
°C/W
°C/W
FDS6682 Rev C (W )
FDS6682
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
30 V
23
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 14 A
V
= 4.5 V, ID = 12.5 A
GS
= 4.5 V, ID = 12.5 A, TJ=125°C
V
GS
1 1.7 3 V
–5.6
5.7
6.6
8
7.5
9
11.5
mV/°C
mΩ
gFS Forward Transconductance VDS = 10 V, ID = 14 A 70 S
Dynamic Characteristics
C
Input Capacitance 2310 pF
iss
C
Output Capacitance 582 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
237 pF
Switching Characteristics (Note 2)
V
= 15 V, ID = 1 A,
t
Turn–On Delay Time 10 20 ns
d(on)
tr Turn–On Rise Time 7 14 ns
t
Turn–Off Delay Time 44 70 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 22 31 nC
Qgs Gate–Source Charge 6.4 nC
Qgd Gate–Drain Charge
DD
= 10 V, R
V
GS
V
= 15 V, ID = 14 A,
DS
= 5 V
V
GS
GEN
= 6 Ω
16 29 ns
8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
θCA
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
mini mum pa d.
FDS6682 Rev C(W )
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