Fairchild Semiconductor FDS6680S Datasheet

February 2000

PRELIMINARY



2000 Fairchild Semiconductor Corporation

FDS6680S Rev B (W)

FDS6680S

30V N-Channel PowerTrench SyncFET

™

General Description

The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a l ow
R

DS(ON)

and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.

Applications

•

DC/DC converter

•

Motor drives

Features

•

11.5 A, 30 V. R

DS(ON)

= 0.011 Ω @ VGS = 10 V

R

DS(ON)

= 0.016 Ω @ VGS = 4.5 V

•

Includes SyncFET Schottky body diode

•

Low gate charge (17nC typical)

•

High performance trench technology for extremely low

R

DS(ON)

and fast switching

•

High power and current handling capability

S

D

S

S

SO-8

D

D

D

G

4
3
2
1

5
6
7
8

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 30 V

V

GSS

Gate-Source Voltage

±

20

V

I

D

Drain Current – Continuous

(Note 1a)

11.5 A

– Pulsed 50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

P

D

(Note 1c)

1

W

TJ, T

STG

Operating and Storage Junction Temperature Range -55 to +150

°

C

Thermal Characteristics

R

θ

JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°

C/W

R

θ

JC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6680S FDS6680S 13’’ 12mm 2500 units

FDS6680S

FDS6680S Rev A (W)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V

∆

BV

DSS

∆

T

J

Breakdown Voltage Temperature
Coefficient

I

D

= 1 mA, Referenced to 25°C

19

mV/°C

I

DSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 mA

I

GSSF

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

I

GSSR

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

On Characteristics

(Note 2)

V

GS(th)

Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 2 3 V

∆

V

GS(th)

∆

T

J

Gate Threshold Voltage
Temperature Coefficient

I

D

= 1 mA, Referenced to 25°C

-3.3

mV/°C

R

DS(on)

Static Drain–Source
On–Resistance

VGS = 10 V, ID = 11.5 A
V

GS

= 4.5 V, ID = 9.5 A

V

GS

=10 V, ID =11.5A, TJ=125°C

9.5

13.5
17

11
16
23

m

Ω

I

D(on)

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A

g

FS

Forward Transconductance VDS = 15 V, ID = 11.5 A 27 S

Dynamic Character istics

C

iss

Input Capacitance 2010 pF

C

oss

Output Capacitance 526 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 15 V, V

GS

= 0 V,

f = 1.0 MHz

186 pF

Switching Characteristics

(Note 2)

t

d(on)

Turn–On Delay Time 10 18 ns

t

r

Turn–On Rise Time 10 18 ns

t

d(off)

Turn–Off Delay Time 34 55 ns

t

f

Turn–Off Fall Time

V

DS

= 15 V, ID = 1 A,

V

GS

= 10 V, R

GEN

= 6

Ω

14 23 ns

Q

g

Total Gate Charge 17 24 nC

Q

gs

Gate–Source Charge 6.2 nC

Q

gd

Gate–Drain Charge

V

DS

= 15 V, ID = 11.5 A,

V

GS

= 5 V

5.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 3.5 A

V

SD

Drain–Source Diode Forward
Voltage

VGS = 0 V, IS = 3.5 A

(Note 2)

VGS = 0 V, IS = 7 A

(Note 2)

0.45

0.6

0.7 V

t

rr

Diode Reverse Recovery Time 20 nS

Q

rr

Diode Reverse Recovery Charge

I

F

= 11.5A,

d

iF/dt

= 300 A/µs

(Note 3)

19.7 nC

Notes:

1.

R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θ

JC

is guaranteed by design while R

θ

CA

is determined by the user's board design.

a) 50°/W when

mounted on a 1 in

2

pad of 2 oz copper

b) 105°/W when

mounted on a .04 in

2

pad of 2 oz copper

c) 125°/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3.

See “SyncFET Schottky body diode characteristics” below.

FDS6680S

FDS6680S Rev A (W)

Typical Characteristics

0

10

20

30

40

50

0123

V

DS

, DRAIN-SOURCE VOLTAGE (V )

I

D

, DRAIN CURRENT (A)

5.0V

4.5V

4.0V

3.5V

3.0V

VGS = 10V

7.0V

0.8

1

1.2

1.4

1.6

1.8

2

0 1020304050

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 4.0V

8.0V
10V

5.0V

4.5V

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.6

1

1.4

1.8

-50 -25 0 25 50 75 100

T

J

, JUNCTION TEMPERATURE (oC)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = 11.5A
V

GS

= 10V

0

0.01

0.02

0.03

0.04

246810

VGS, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

ID = 6A

TA = 100oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

50

12345

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

TA = -55oC
25oC

100oC

VDS = 5V

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

TA = 100oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6680S