Fairchild Semiconductor FDS6680 Datasheet

April 1998

FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

General Description Features

This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.

The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.

DS(ON)

11.5 A, 30 V. R
R

= 0.010 Ω @ VGS = 10 V

DS(ON)

= 0.015 Ω @ VGS = 4.5 V.

DS(ON)

Optimized for use in switching DC/DC converters with
PWM controllers.

Very fast switching.
Low gate charge (typical Qg = 19 nC).

SOT-23

SuperSOTTM-8

SO-8 SOT-223SuperSOTTM-6

5

6

7
8

Absolute Maximum Ratings T

Symbol Parameter FDS6680 Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 11.5 A

= 25oC unless other wise noted

A

SOIC-16

4

3
2

1

- Pulsed 50

P

D

Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2

(Note 1c) 1

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

© 1998 Fairchild Semiconductor Corporation

FDS6680 Rev.E1

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 23 mV/ oC

/∆T

J

Zero Gate Voltage Drain Current VDS = 24 V, V

= 0 V 1 µA

GS

TJ = 55°C 10 µA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC -5 mV/oC

/∆T

J

Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A 0.0085 0.01

TJ =125°C 0.014 0.017

VGS = 4.5 V, ID = 9.5 A 0.0125 0.015

I

D(ON)

g

FS

On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, ID = 11.5 A 40 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 510 pF

f = 1.0 MHz

2070 pF

Reverse Transfer Capacitance 235 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDS= 15 V, I D = 1 A 13 21 ns
Turn - On Rise Time

VGS = 10 V , R

GEN

= 6 Ω

10 18 ns

Turn - Off Delay Time 36 58 ns
Turn - Off Fall Time 13 23 ns
Total Gate Charge VDS = 15 V, ID = 11.5 A, 19 27 nC
Gate-Source Charge V

= 5 V 7 nC

GS

Gate-Drain Charge 6 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A

is determined by the user's board design.

CA

θ

(Note 2) 1.2 V

Ω

is guaranteed by

JC

θ

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 105OC/W on a 0.04 in

pad of 2oz copper.

2

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

FDS6680 Rev.E1

Typical Electrical Characteristics

50

V = 10V

GS

6.0

40

5.0

30

20

10

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5

4.5

4.0

3.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

3.0

Figure 1. On-Region Characteristics.

1.8

I = 11.5A

D

V =10V

GS

1.6

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2.5

1.5

DS(ON)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

)
OHM

DS(ON)

R ,(

3

V = 3.5V

GS

2

4.0

4.5

5.0

6.0

1

0 10 20 30 40 50

I , DRAIN CURRENT (A)

D

10

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.04

0.03

0.02

0.01

DRAIN-SOURCE ON-RESISTANCE

0

2 4 6 8 10

T = 25 C

A

V ,GATE-SOURCE VOLTAGE (V)

GS

T = 125 C

A

o

o

I = 11.5A

D

Figure 3. On-Resistance Variation with

Temperature.

50

V = 10V

DS

40

30

20

D

I , DRAIN CURRENT (A)

10

0

0 1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

J

125°C

25°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

50

V =0V

GS

10

T = 125°C

1

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2

J

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6680 Rev.E1