Fairchild Semiconductor FDS6678A Datasheet
FDS6678A
30V N-Channel PowerTrench
MOSFET
FDS6678A
April 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Features
• 7.5 A, 30 V. R
R
• High performance trench te chnology for extremely
low R
DS(ON)
= 24 mΩ @ VGS = 4.5 V
DS(ON)
= 20 mΩ @ VGS = 10 V
DS(ON)
Applications
• DC/DC converter
• Low gate charge (13 nC typical)
• High power and current handling capability
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 40
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
(Note 1c)
±12
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6678A FDS6678A 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDS6678A Rev C(W)
FDS6678A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
30 V
22
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 4.5 V, VDS = 5 V 40 A
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
V
= 4.5 V, ID = 6.8 A
GS
= 4.5 V, ID = 6.8 A TJ =125°C
V
GS
= 10 V, ID = 7.5 A,
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 7.5 A 30 S
0.8 1.4 2 V
– 4
20
29
18
24
40
20
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1460 pF
iss
C
Output Capacitance 227 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
96 pF
Switching Characteristics (Note 2)
V
= 10 V, ID = 1 A,
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 35 58 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 13 21 nC
Qgs Gate–Source Charge 3.6 nC
Qgd Gate–Drain Charge
DD
= 4.5 V, R
V
GS
V
= 15 V, ID = 7.5 A,
DS
V
= 4.5 V
GS
GEN
= 6 Ω
7 14 ns
3.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°/W when
mounted on a 1in
pad of 2 oz copper
2
= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
V
GS
is determined by the user's board design.
θCA
b) 105°/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°/W when mounted on a
minimum pad.
FDS6678A Rev C(W)
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