Fairchild Semiconductor FDS4488 Datasheet
December 2001
FDS4488
FDS4488
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low inline power loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 7.9 A, 30 V. R
R
• Low gate charge (9.5 nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 22 mΩ @ VGS = 10 V
DS(ON)
= 30 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage ±25 V
GSS
ID Drain Current – Continuous (Note 1a) 7.9 A
– Pulsed 40
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175 °C
1.2
1.0
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 25
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4488 FDS4488 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation FDS4488 Rev B (W)
FDS4488
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA
21
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 7.9 A
VGS = 4.5 V, ID = 6.8 A
VGS = 10 V, ID = 7.9 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
–6
15
21
22
22
30
35
mV/°C
m Ω
gFS Forward Transconductance VDS = 10 V, ID = 7.9 A 24 S
Dynamic Characteristics
C
Input Capacitance 927 pF
iss
C
Output Capacitance 241 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
97 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7.4 15 ns
d(on)
tr Turn–On Rise Time 7.5 15 ns
t
Turn–Off Delay Time 25 40 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 9.5 13 nC
Qgs Gate–Source Charge 3.3 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 7.9 A,
VGS = 5 V
5 10 ns
3.1 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time 22 nS
Qrr Diode Reverse Recovery Charge
Notes :
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
IF = 7.9 A,
diF/dt = 100 A/µs
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
20 nC
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size
paper
FDS4488 Rev B (W)
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