Fairchild Semiconductor FDG6302P Datasheet

FDG6302P
Dual P-Channel, Digital FET

General Description Features

These dual P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small

signal MOSFETs.

SC70-6

SOT-23

SuperSOTTM-6

SuperSOTTM-8

July 1999

-25 V, -0.14 A continuous, -0.4 A peak.
R
R

Very low level gate drive requirements allowing direct
operation in 3 V circuits (V

Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).

Compact industry standard SC70-6 surface
mount package.

= 10 Ω @ V

DS(ON)

= 13 Ω @ V

DS(ON)

= -4.5 V,

GS

= -2.7 V.

GS

< 1.5 V).

GS(th)

SO-8

SOT-223

S2

G2

D1

.

SC70-6

*The pinouts are symmetrical; pin 1 and 4 are interchangeable.

Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Absolute Maximum Ratings T

Symbol Parameter FDG6302P Units

V

DSS

V

GSS

I

D

P

D

TJ,T

ESD Electrostatic Discharge Rating MIL-STD-883D

THERMAL CHARACTERISTICS

R

JA

θ

Drain-Source Voltage -25 V

Gate-Source Voltage -8 V

Drain/Output Current - Continuous -0.14 A

Maximum Power Dissipation (Note 1) 0.3 W
Operating and Storage Temperature Range -55 to 150 °C

STG

Human Body Model (100 pF / 1500 Ω)

Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

.02

D2

G1

S1

= 25°C unless otherwise noted

A

- Pulsed -0.4

1 or 4

2 or 5

3 or 6

*

6 or 3

5 or 2

4 or 1

6.0 kV

*

FDG6302P Rev.F1

Electrical Characteristics (T

= 25 OC unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25oC -19 mV / oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -20 V, V

= 0 V -1 µA

GS

TJ = 55°C -10 µA

I

GSS

Gate - Body Leakage Current VGS = -8 V, V

= 0 V -100 nA

DS

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.65 -0.9 -1.5 V
Gate Threshold Voltage Temp.Coefficient ID = -250 µA, Referenced to 25oC 2 mV /

/∆T

J

Static Drain-Source On-Resistance VGS = -4.5 V, ID = -0.14 A 7.3 10

o

Ω

TJ =125°C 11 17

VGS = -2.7 V, ID = -0.05 A 10.4 13

I

D(ON)

g

FS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -0.14 A
Forward Transconductance VDS = -5 V, ID = -0.14 A 0.12 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V,
Output Capacitance 7 pF

f = 1.0 MHz

12 pF

Reverse Transfer Capacitance 1.5 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t
t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = -5 V, ID = -0.25 A,
Turn - On Rise Time 8 16 ns

VGS = -4.5 V, R

GEN

= 6 Ω

5 12 ns

Turn - Off Delay Time 9 18 ns
Turn - Off Fall Time 5 10 ns
Total Gate Charge VDS = -5 V, ID = -0.14 A,
Gate-Source Charge 0.12 nC

VGS = -4.5 V

0.22 0.31 nC

Gate-Drain Charge 0.05 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

by design while R

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Source Current -0.25 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.25 A (Note 2) -0.8 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design. R

CA

θ

= 415OC/W on minimum pad mounting on FR-4 board in still air.

JA

θ

is guaranteed

JC

θ

C

FDG6302P Rev.F1

Typical Electrical Characteristics

0.2

0.15

V = -4.5V

GS

-3.5V

-3.0V

-2.7V

0.1

0.05

D

-I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.5V

Figure 1. On-Region Characteristics.

1.6

I = -0.14A

D

V = -4.5V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-2.0V

2.5

V = -2.0V

GS

2

-2.5V

-2.7V

1.5

-3.0V

-3.5V

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 0.05 0.1 0.15 0.2

-I , DRAIN CURRENT (A)

D

-4.0V

-4.5V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

25

20

15

10

5

DS(ON)

R , ON-RESISTANCE (OHM)

0

1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE TO SOURCE VOLTAGE (V)

GS

I = -0.07A

D

T = 125°C

A

T = 25°C

A

Figure 3. On-Resistance Variation

with Temperature.

0.14

V = -5.0V

DS

0.12

0.1

0.08

0.06

0.04

D

-I , DRAIN CURRENT (A)

0.02

0

0 1 2 3 4

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

A

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.3

V = 0V

GS

0.1

T = 125°C

A

25°C

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDG6302P Rev.F