Fairchild Semiconductor FDG327N Datasheet
FDG327N
FDG327N
20V N-Channel PowerTrench MOSFET
October 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
and gate charge (QG) in a small package.
DS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V. R
R
• Fast switching speed
• Low gate charge (4.5 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
= 90 mΩ @ VGS = 4.5 V.
DS(ON)
= 100 mΩ @ VGS = 2.5 V
DS(ON)
R
= 140 mΩ @ VGS = 1.8 V
DS(ON)
S
D
D
1
2
6
5
G
Pin 1
SC70-6
Absolute Maximum Ratings T
D
D
=25oC unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 1.5 A
– Pulsed 6
Power Dissipation for Single Operation (Note 1a) 0.42 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150 °C
± 8
0.38
V
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 300
Thermal Resistance, Junction-to-Ambient (Note 1b) 333
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.27 FDG327N 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDG327N Rev C (W)
Electrical Characteristics T
FDG327N
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
Breakdown Voltage Temperature
Coefficient
J
ID = 250 µA,Referenced to 25°C 12 mV/°C
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.7 1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
VGS = 4.5 V, ID = 1.5 A
VGS = 2.5 V, ID = 1.4 A
VGS = 1.8 V, ID = 1.2 A
VGS = 4.5 V, ID = 1.5 A, TJ =125°C
–3 mV/°C
57
66
82
72
On–State Drain Current VGS = 4.5V, VDS = 5 V 6 A
Forward Transconductance VDS = 10 V, ID = 1.5 A 9 S
90
100
140
115
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 423 pF
Output Capacitance 87 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V
48 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 6 12 ns
Turn–On Rise Time 6.5 13 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 14 29 ns
Turn–Off Fall Time
Total Gate Charge 4.5 6.3 nC
Gate–Source Charge 0.89 nC
VDS = 10 V, ID = 1.5 A,
VGS = 4.5 V
Gate–Drain Charge
2 4 ns
0.95 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 0.32 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 0.32 A (Note 2) 0.75 1.2 V
is determined by the user's board design.
mΩ
a) 300°C/W when
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
mounted on a 1in2 pad
of 2 oz copper.
b) 333°C/W when mounted
on a minimum pad of 2 oz
copper.
FDG327N Rev C (W)
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