Fairchild Semiconductor FDG326P Datasheet
FDG326P
P-Channel 1.8V Specified PowerTrench
MOSFET
FDG326P
January 2001
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –1.5 A, –20 V. R
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
= 140 mΩ @ VGS = –4.5 V
DS(ON)
R
= 180 mΩ @ VGS = –2.5 V
DS(ON)
R
= 250 mΩ @ VGS = –1.8 V
DS(ON)
• Compact industry standard SC70-6 surface mount
package
1
2
3
3
6
5
4
SC70-6
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
± 8
Drain Current – Continuous (Note 1a) –1.5 A
– Pulsed –6
Power Dissipation for Single Operation (Note 1a) 0.75 WP
(Note 1b)
0.48
Operating and Storage Junction Temperature Range -55 to +150
V
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient Note 1b) 260
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.26 FDG326P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
FDG326P Rev D(W)
FDG326P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = –250 µA
GS
I
= –250 µA, Referenced to 25°C
D
–20 V
–12
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = –250 µA
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –4.5 V, ID = –1.5 A
= –2.5 V, ID = –1.3 A
V
GS
= –1.8 V, ID = –0.8 A
V
GS
V
= –4.5 V, ID = –1.5 A, TJ = 125°C
GS
–0.4 –0.9 –1.5 V
2
105
140
210
125
On–State Drain Current VGS = –4.5 V, VDS = –5 V –6 A
Forward Transconductance VDS = –5 V, ID = –1.5 A 5.3 S
140
180
250
200
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 467 pF
Output Capacitance 85 pF
Reverse Transfer Capacitance
= –10 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
38 pF
Switching Characteristics (Note 2)
V
= –10 V, ID = 1 A,
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 13 23 ns
Turn–Off Delay Time 18 32 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 4.4 7 nC
Gate–Source Charge 1.0 nC
Gate–Drain Charge
DD
= –4.5 V, R
V
GS
V
= –10 V, ID = –1.5 A,
DS
= –4.5 V
V
GS
GEN
= 6 Ω
816ns
0.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current –0.62 A
Drain–Source Diode Forward
VGS = 0 V, IS = –0.62 A (Note 2) –0.75 –1.2 V
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
FDG326P Rev D(W)