Fairchild Semiconductor FDG316P Datasheet

FDG316P

P-Channel Logic Level PowerTrench







MOSFET

FDG316P

December 2001

General Description

This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Power Management

S

D

D

G

SC70-6

D

D

Features

• -1.6 A, -30 V. R

R

= 0.19 Ω @ V

DS(ON)

= 0.30 Ω @ V

DS(ON)

= -10 V

GS

= -4.5 V.

GS

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely low

R

DS(ON)

.

• Compact industry standard SC70-6 surface mount

package.

1

2

3

3

6

5

4

Absolute Maximum R atings

TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -30 V
Gate-Source Voltage ±

Drain Current - Continuous

- Puls e d -6

Power Dissipation for Single Operation

Operating and Storage Junction Tem perature Range -55 to +150 °

(Note 1a)

(Note 1a)
(Note 1b)

20

-1.6 A

0.75 W

0.48

Thermal Characteristics

R

JA

θ

Thermal Resistance, Junction-to-Amb ient

(Note 1b)

260

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.

36

2001 Fairchild Semiconductor Corporation

FDG316P 7’’ 8mm 3000 units

V

C

°C/W

FDG316P Rev. D

FDG316P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆
∆

I

DSS

I

GSS

I

GSS

BV

DSS

T

DSS

J

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = -250 µA

V

GS

= -250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1
Gate-Body Leakage Forward VGS = 16 V, VDS = 0 V 100 nA
Gate-Body Leakage Reverse VGS = -16 V, VDS = 0 V -100 nA

-30 V

-34

mV/°C

µ

On Characteristics (Note 2)

V

∆
∆

R

I

D(on)

g

GS(th)

V

GS(th)

T

DS(on)

FS

Gate Threshold Voltage
Gate Threshold Voltage

J

Temperature Coeffic i ent
Static Drain-Source

On-Resistance

= VGS, ID = -250 µA

V

DS

= -250 µA, Referenced to 25°C

I

D

VGS = -10 V, ID = -1.6 A
V

= -10 V, ID = -1.6 A,TJ =125°C

GS

V

= -4.5 V, ID = -1.3 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -3 A
Forward Transconductance VDS = -5 V, ID = -0.5 A 3 S

-1 -1.6 -3 V

3.5

0.16

0.22

0.23

mV/°C

0.19

0.31

0.30

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 165 pF
Output Capacitance 60 pF
Reverse Transfer Capacitanc e

V

= -15 V, VGS = 0 V,

DS

f = 1.0 MHz

25 pF

A

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn-On Delay Time 8 20 ns
Turn-On Rise Time 9 20 ns

= -15 V, ID = -1 A,

V

DD

V

= -10 V, R

GS

GEN

= 6

Ω

Turn-Off Delay Time 14 30 ns
Turn-Off Fall Time
Total Gate Charge 3.5 5 nC
Gate-Source Charge 0.6 nC

V

= -15 V, ID = -1.6 A,

DS

= -10 V

V

GS

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface

θJA

of the drain pins. R

a) 170°C/W when mounted on a 1 in2 pad of 2oz copper.
b) 260°C/W when mounted on a minimum pad.

2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -0.42 A
Drain-Source Diode Forward

VGS = 0 V, IS = -0.42 A (Note 2) 0.75 -1.2 V

Voltage

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

210ns

0.8 nC

FDG316P Rev. D