Fairchild Semiconductor FDG315N Datasheet

FDG315N

N-Channel Logic Level PowerTrench







MOSFET

FDG315N

July 2000

General Description

This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Power Management

S

D

D

G

SC70-6

D

D

Features

•

2 A, 30 V. R

R

DS(ON)

DS(ON)

= 0.12 Ω @ V

= 0.16 Ω @ V

= 10 V

GS

= 4.5 V.

GS

• Low gate charge (2.1nC typical).

• High performance trench technology for extremely low

R

DS(ON)

.

• Compact industry standard SC70-6 surface mount

package.

1

2

3

3

6

5

4

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 30 V
Gate-Source Voltage

Drain Current - Continuous

- Pulsed 6

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

±

20
2A

0.75 W

0.48

Thermal Characteristics

θ

R

JA

Thermal Resistance, Junction-to-Ambi ent

(Note 1b)

260

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

15

.

2000 Fairchild Semiconductor International

FDG315N 7’’ 8mm 3000 units

V

°

C

°

C/W

FDG315N Rev. C

FDG315N

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

∆
∆

I

DSS

I

GSS

I

GSS

BV

DSS

T

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Forward VGS = 16 V, VDS = 0 V 100 nA
Gate-Body Leakage Reverse VGS = -16 V, VDS = 0 V -100 nA

30 V

26

mV/°C

µ

A

On Characteristics (Note 2)

V

∆
∆

R

I

D(on)

G

GS(th)

V

GS(th)

T

DS(on)

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 2 A
V

= 10 V, ID = 2 A, TJ = 125°C

GS

V

= 4.5 V, ID = 1.7 A

GS

On-State Drain Current VGS = 4.5 V, VDS = 5 V 3 A
Forward Transconductance VDS = 5 V, ID = 2 A 5 S

11.83 V

-4

0.100

0.140

0.130

0.12

0.20

0.16

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 220 pF
Output Capacitance 50 pF
Reverse Transfer Capacitance

V

= 15 V, VGS = 0 V,

DS

f = 1.0 MHz

20 pF

Switching Characteristics (Note 2)

I

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time 3 6 ns
Turn-On Rise Time 11 22 ns

= 15 V, ID = 1 A,

V

DD

V

= 10 V, R

GS

GEN

= 6

Ω

Turn-Off Delay Time 7 14 ns
Turn-Off Fall Time
Total Gate Charge 2.1 4 nC
Gate-Source Charge 0.8 nC

V

= 15 V, ID = 2 A,

DS

= 5 V

V

GS

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface

θJA

of the drain pins. R

a) 170°C/W when mounted on a 1 in2 pad of 2oz copper.
b) 260°C/W when mounted on a minimum pad.

2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 0.42 A
Drain-Source Diode Forward

VGS = 0 V, IS = 0.42 A (Note 2) 0.7 1.2 V

Voltage

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

36ns

0.7 nC

FDG315N Rev. C