Fairchild Semiconductor FDG313N Datasheet

FDG313N

Digital FET, N-Channel

General Description

This N-Channel enhancement mode field effect
transistor is produced using Fairchild's proprietary , high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially
for low voltage applications as a replacement for
bipolar digital transistor and small signal MOSFET.

Applications

• Load switch

• Battery protection

• Power management

July 2000

Features

• 0.95 A, 25 V. R

R

= 0.45 Ω @ V

DS(on)

= 0.60 Ω @ V

DS(on)

= 4.5 V

GS

= 2.7 V.

GS

• Low gate charge (1.64 nC typical)

• Very low level gate drive requirements allowing direct

operation in 3V circuits (V

GS(th)

< 1.5V).

• Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

• Compact industry standard SC70-6 surface mount

package.

FDG313N

S

D

1

6

D

2

5

G

1

pin

SC70-6

Absolute Maximum Ratings

D

D

TA = 25°C unless otherwise noted

Symbol Parameter FDG313N Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

ESD Electrostatic Di scharge Rating MIL-STD-883D

Drain-Source Voltage 25 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 2

Power Dissipation for Si ngl e Operation

(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

Human Body Model (100pf / 1500 Ohm)

(Note 1a)

(Note 1a)

(Note 1c)

3

3

±

0.95 A

0.75 W

0.55

0.48

4

8V

C

°

6kV

Thermal Characteristics

R

JA

θ

Thermal Resistance, Junction-to-Ambient

(Note 1c)

260

C/W

°

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

13

.

1998 Fairchild Semiconductor Corporation

FDG313N 7’’ 8mm 3000 units

FDG313N Rev. C

FDG313N

yp

DMOS Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T

Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSS

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA25 V
Breakdown Voltage Temperature

DSS

Coefficient

J

ID = 250 µA, Referenced to 25°C30mV/

Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1
Gate-Body Leakage Current VGS = 8 V, VDS = 0 V 100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.65 0.8 1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = 250 µA, Referenced to 25°C-2mV/

VGS = 4.5 V, ID = 0.5 A
V

= 4.5 V, ID = 0.5 A @ 125°C

GS

V

= 2.7 V, ID = 0.2 A

GS

On-State Drain Current VGS = 4.5 V, VDS = 5 V 0.5 A
Forward Transconductance VDS = 5 V, ID = 0.5 A 1.5 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 50 pF
Output Capacitance 28 pF
Reverse Transfer Capacitance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time 3 6 ns
Turn-On Rise Time 8.5 18 ns
Turn-Off Delay Time 17 30 ns
Turn-Off Fall Time
Total Gate Charge 1.64 2.3 nC
Gate-Source Charge 0.38 nC
Gate-Drain Charge

(Note 2)

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

= 6 V, ID = 0.5 A,

V

DD

V

= 4.5 V, R

GS

V

= 5 V, ID = 0.95 A,

DS

V

= 4.5 V

GS

GEN

= 50

Ω

Max Units

C

°

A

µ

C

°

0.35

0.45

0.53

0.76

0.45

0.6

9pF

13 25 ns

0.45 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Di ode Forward Current 0.6 A

copper.

(Note 2)

0.8 1.2 V

c) 260°C/W when
mounted on a minimum
pad of 2oz copper.

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.6 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 170°C/W when

mounted on a 1 in
pad of 2oz copper.

is determined by the user's board design.

θJA

2

b) 225°C/W when
mounted on a half
of package sized 2oz.

FDG313N Rev. C

T ypical Characteristics

FDG313N

2

V = 4 .5V

GS

3.0V

2.5V

1.5

2.0V

1

0.5

D

I , DRAIN-SOURCE CURRENT (A)

0

01234

V , DRAIN-SOURCE VOLTAGE (V)

DS

1.5V

Figure 1. On-Region Characteristics.

1.6

I = 0.95 A

D

V = 4.5 V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMP ERATURE (°C)

J

2.5

2

V = 2.0V

GS

1.5

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

00.511.52

2.5V

3.0V

3.5V

I , DRAIN CURRENT (A)

D

4.0V

4.5V

Figure 2. On-Resistance V ariation

with Drain Current and Gate V olt age.

1.6

I = 0. 5A

D

1.2

0.8

0.4

DS(ON)

R , ON-R ES IS TANCE (OHM)

0

12345

V , GATE TO SOURCE VOLTAGE (V)

GS

T = 125° C

A

T = 25°C

A

Figure 3. On-Resistance V ariation

with T emperature.

1

V = 5.0V

DS

0.8

0.6

0.4

D

I , DRAIN CURRENT (A)

0.2

0

00.511.522.5

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation

with Gate-to-Source Volt age.

1

V = 0V

GS

T = 125°C

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001

00.20.40.60.811.2

V , BODY DIODE FORWARD VOLTAGE (V)

J

25°C

-55°C

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDG313N Rev. C