Fairchild Semiconductor FDC3612 Datasheet
FDC3612
100V N-Channel PowerTrench
MOSFET
FDC3612
February 2002
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
Features
• 2.6 A, 100 V R
R
• High performance trench technology for extremely
low R
• Low gate charge (14nC typ)
• High power and current handling capability
• Fast switching speed
DS(ON)
= 125 mΩ @ VGS = 10 V
DS(ON)
= 135 mΩ @ VGS = 6 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 2.6 A
PD
TJ, T
STG
– Pulsed 20
Maximum Power Dissipation (Note 1a) 1.6 W
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
± 20
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2002 Fairchild Sem iconductor Corporation
.362 FDC3612 7’’ 8mm 3000 units
°C/W
°C/W
FDC3612 Rev B3 (W )
FDC3612
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID=2.6 A 90 mJ
DSS
IAR Drain-Source Avalanche Current 2.6 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
100 V
99
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 10 V, VDS = 5 V 10 A
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
V
= 10 V, ID = 2.6 A
GS
V
= 6.0 V, ID = 2.5 A
GS
= 10 V, ID = 2.6 A;TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 2.6 A 10 S
2 2.3 4 V
– 6
86
91
157
125
135
240
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 660 pF
iss
C
Output Capacitance 55 pF
oss
C
Reverse Transfer Capacitance
rss
= 50 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
40 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 11 ns
d(on)
tr Turn–On Rise Time 3.5 7 ns
t
Turn–Off Delay Time 23 37 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 2.3 nC
Qgd Gate–Drain Charge
= 50 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 50 V, ID = 2.6 A,
DS
V
= 10 V
GS
GEN
= 6 Ω
3.7 7.4 ns
3.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD
trr Diode Reverse Recovery Time 31 nS
Qrr Diode Reverse Recovery Charge
Notes:
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
1. R
θJA
pins. R
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycl e ≤ 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
2
pad of 2oz copper on FR-4 board.
V
= 0 V, IS = 1.3 A (Note 2) 0.76 1.2 V
GS
I
= 2.6 A
F
= 100 A/µs (Note 2)
d
iF/dt
is determined by the user's board design.
θCA
56 nC
FDC3612 Rev B3(W )
Loading...