Fairchild Semiconductor BAV103 Datasheet
BAV103
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Expansion Gap
High Voltage,
General Purpose Diode
Absolute Maximum Ratings* TA = 25
Sym Parameter Value Units
O
C unless otherwise noted
GREEN
ORANGE
T
stg
T
J
P
D
Linear Derating Factor from T
R
OJA
W
iv
I
O
I
F
i
f
i
F(surge)
Storage Temperature -65 to +200
Operating Junction Temperature -65 to +200 OC
Total Power Dissipation at TA = 25OC 500 mW
= 25OC 3.33 mW/OC
A
Thermal Resistance Junction-to-Ambient 350 OC/W
Working Inverse Voltage 200 V
Average Rectified Current 200 mA
DC Forward Current (IF) 500 mA
Recurrent Peak Forward Current 600 mA
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 4.0 Amp
O
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics TA = 25
O
C unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
B
Breakdown Voltage 250 V IR= 100 uA
V
I
V
C
T
© 1997 Fairchild Semiconductor Corporation
Reverse Leakage 100 nA VR= 200 V
R
Forward Voltage 1.00 V IF= 100 mA
F
Capacitance 5.0 pF VR= 0.0 V,f = 1.0 MHz
T
Reverse Recovery Time 50 ns IF= IR 30 mA IRR= 1.0 mA
RR
100 uA VR= 200 V TA = 150OC
1.25 V IF= 200 mA
RL = 100 Ohms
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
THE CATHODE TERMINAL OF THE DEVICE. THE EXPANSION GAP & CATHODE BAND CAN BE
ON THE SAME TERMINAL OR AT OPPOSITE TERMINALS OF THE DIODE.
TERMINALS:
DUMET (ALLOY 47)
0.059 (1.499)
0.055 (1.397)
0.138 (3.505)
0.130 (3.302)
0.104 (2.64)
EXPANSION GAP
REFERENCE
GLASS SLEEVE
0.020 (0.50)
0.014 (0.35)
LL-34
JEDEC (AC VERSION)
Fairchild Semiconductor's Criteria
5-MAR-98
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